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STQ2HNK60ZR-AP from ST,ST Microelectronics

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STQ2HNK60ZR-AP

Manufacturer: ST

N-CHANNEL 600V

Partnumber Manufacturer Quantity Availability
STQ2HNK60ZR-AP,STQ2HNK60ZRAP ST 58988 In Stock

Description and Introduction

N-CHANNEL 600V The part **STQ2HNK60ZR-AP** is manufactured by **STMicroelectronics (ST)**.  

### **Specifications:**  
- **Type:** N-channel MOSFET  
- **Technology:** MDmesh™ K5  
- **Voltage Rating (VDS):** 600V  
- **Current Rating (ID):** 2A  
- **Power Dissipation (PD):** 35W  
- **Gate-Source Voltage (VGS):** ±30V  
- **On-Resistance (RDS(on)):** 2.5Ω (max) @ VGS = 10V  
- **Package:** TO-92 (Through-hole)  

### **Descriptions & Features:**  
- **High Voltage Capability:** Suitable for switching applications up to 600V.  
- **Low Gate Charge:** Enhances switching efficiency.  
- **Fast Switching Speed:** Optimized for high-frequency applications.  
- **Low On-Resistance:** Reduces conduction losses.  
- **Avalanche Ruggedness:** Improved reliability in harsh conditions.  
- **Applications:** Used in power supplies, lighting, motor control, and other high-voltage switching circuits.  

This MOSFET is part of ST's **MDmesh™ K5** series, designed for efficiency and robustness in power conversion applications.  

Would you like additional details on a specific parameter?

Application Scenarios & Design Considerations

N-CHANNEL 600V

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