for lowest Conduction Losses The SPW11N60S5 is a power MOSFET manufactured by Infineon Technologies (INF). Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:
### **Specifications:**
- **Manufacturer:** Infineon Technologies (INF)
- **Part Number:** SPW11N60S5
- **Type:** N-Channel Power MOSFET
- **Technology:** CoolMOS™ Power Transistor
- **Drain-Source Voltage (VDS):** 600 V
- **Continuous Drain Current (ID):** 11 A
- **Pulsed Drain Current (IDM):** 44 A
- **Power Dissipation (PD):** 190 W
- **Gate-Source Voltage (VGS):** ±20 V
- **On-State Resistance (RDS(on)):** 0.38 Ω (typical) at VGS = 10 V
- **Threshold Voltage (VGS(th)):** 3.5 V (typical)
- **Input Capacitance (Ciss):** 1200 pF (typical)
- **Output Capacitance (Coss):** 110 pF (typical)
- **Reverse Transfer Capacitance (Crss):** 30 pF (typical)
- **Turn-On Delay Time (td(on)):** 12 ns (typical)
- **Turn-Off Delay Time (td(off)):** 60 ns (typical)
- **Operating Junction Temperature (TJ):** -55°C to +150°C
- **Package:** TO-247
### **Descriptions:**
- The SPW11N60S5 is a high-voltage N-Channel MOSFET designed for efficient power switching applications.
- It belongs to Infineon’s CoolMOS™ family, optimized for low conduction and switching losses.
- Suitable for applications such as power supplies, motor control, and inverters.
### **Features:**
- **Low On-Resistance:** Minimizes conduction losses.
- **Fast Switching:** Optimized for high-frequency operation.
- **High Voltage Capability:** 600 V rating for robust performance.
- **Low Gate Charge:** Enhances switching efficiency.
- **Avalanche Rugged:** Improved reliability under harsh conditions.
- **Pb-Free & RoHS Compliant:** Environmentally friendly.
This information is based solely on the manufacturer's datasheet and technical documentation.
