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STTH4R02S from ST,ST Microelectronics

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STTH4R02S

Manufacturer: ST

Ultrafast recovery diode

Partnumber Manufacturer Quantity Availability
STTH4R02S ST 1280 In Stock

Description and Introduction

Ultrafast recovery diode The STTH4R02S is a high-efficiency ultrafast diode manufactured by STMicroelectronics. Below are its specifications, descriptions, and features based on factual information from Ic-phoenix technical data files:

### **Specifications:**  
- **Type:** Ultrafast Diode  
- **Voltage Rating (VRRM):** 200 V  
- **Average Forward Current (IF(AV)):** 4 A  
- **Peak Forward Surge Current (IFSM):** 80 A (non-repetitive)  
- **Forward Voltage Drop (VF):** 1.2 V (typical at 4 A)  
- **Reverse Recovery Time (trr):** 35 ns (typical)  
- **Operating Junction Temperature (Tj):** -40°C to +175°C  
- **Package:** D²PAK (TO-263)  

### **Description:**  
The STTH4R02S is an ultrafast recovery diode designed for high-efficiency applications. It features low forward voltage drop and very fast switching characteristics, making it suitable for power converters, freewheeling diodes, and snubber circuits.  

### **Features:**  
- **Ultrafast Recovery Time:** Ensures reduced switching losses.  
- **Low Forward Voltage:** Enhances efficiency in high-current applications.  
- **High Surge Current Capability:** Withstands high transient currents.  
- **AEC-Q101 Qualified:** Suitable for automotive applications.  
- **Pb-Free and RoHS Compliant:** Environmentally friendly.  

This information is based on STMicroelectronics' official datasheet and technical documentation.

Application Scenarios & Design Considerations

Ultrafast recovery diode
Partnumber Manufacturer Quantity Availability
STTH4R02S STMicroe 20000 In Stock

Description and Introduction

Ultrafast recovery diode The STTH4R02S is a high-efficiency ultrafast diode manufactured by STMicroelectronics. Below are its key specifications, descriptions, and features:

### **Specifications:**  
- **Part Number:** STTH4R02S  
- **Manufacturer:** STMicroelectronics  
- **Type:** Ultrafast Recovery Diode  
- **Voltage Rating (VRRM):** 200 V  
- **Average Forward Current (IF(AV)):** 4 A  
- **Peak Forward Surge Current (IFSM):** 100 A (non-repetitive)  
- **Forward Voltage Drop (VF):** 1.15 V (typical) at 4 A  
- **Reverse Recovery Time (trr):** 35 ns (typical)  
- **Operating Junction Temperature (Tj):** -40°C to +175°C  
- **Package:** TO-277A (SMPC)  

### **Description:**  
The STTH4R02S is designed for high-efficiency applications requiring fast switching and low power losses. It is optimized for use in power supplies, inverters, and other high-frequency circuits.  

### **Features:**  
- **Ultrafast Recovery:** Low reverse recovery time (35 ns) for reduced switching losses.  
- **Low Forward Voltage:** Ensures minimal conduction losses.  
- **High Surge Current Capability:** Supports transient conditions.  
- **AEC-Q101 Qualified:** Suitable for automotive applications.  
- **RoHS Compliant:** Environmentally friendly.  

For detailed application notes or additional technical data, refer to the official STMicroelectronics datasheet.

Application Scenarios & Design Considerations

Ultrafast recovery diode

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