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STP10NB20FP from ST,ST Microelectronics

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STP10NB20FP

Manufacturer: ST

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Partnumber Manufacturer Quantity Availability
STP10NB20FP ST 420 In Stock

Description and Introduction

N The **STP10NB20FP** is an N-channel Power MOSFET manufactured by **STMicroelectronics**. Below are its key specifications, descriptions, and features:

### **Specifications:**
- **Drain-Source Voltage (VDSS):** 200V  
- **Continuous Drain Current (ID):** 10A  
- **Pulsed Drain Current (IDM):** 40A  
- **Power Dissipation (Ptot):** 75W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 0.35Ω (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 2-4V  
- **Total Gate Charge (Qg):** 20nC (typical)  
- **Input Capacitance (Ciss):** 500pF (typical)  
- **Operating Junction Temperature (TJ):** -55°C to 150°C  

### **Package:**
- **TO-220FP (FullPack)** – Lead-free, isolated mounting tab  

### **Description:**
The **STP10NB20FP** is a high-voltage MOSFET designed for power switching applications. It features low on-resistance and fast switching performance, making it suitable for high-efficiency power conversion.  

### **Features:**
- **High voltage capability (200V)**  
- **Low gate charge** for fast switching  
- **Low RDS(on)** for reduced conduction losses  
- **Avalanche ruggedness** for reliability in harsh conditions  
- **Isolated TO-220FP package** for simplified thermal management  

This MOSFET is commonly used in **DC-DC converters, motor control, and power supplies**.  

(Source: STMicroelectronics datasheet)

Application Scenarios & Design Considerations

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