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PSMN9R5-100PS from NXP/PH,NXP Semiconductors

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PSMN9R5-100PS

Manufacturer: NXP/PH, NXP

N-channel 100 V 9.6 m鈩?standard level MOSFET in T0220
Partnumber Manufacturer Quantity Availability
PSMN9R5-100PS,PSMN9R5100PS NXP/PH, NXP 10076 In Stock

Description and Introduction

N-channel 100 V 9.6 m鈩?standard level MOSFET in T0220 **Introduction to the PSMN9R5-100PS Electronic Component**  

The PSMN9R5-100PS is a high-performance N-channel MOSFET designed for power management applications. With a low on-resistance (RDS(on)) of just 9.5 mΩ and a voltage rating of 100V, this component is optimized for efficient power switching in demanding environments.  

Key features include a robust current-handling capability, making it suitable for applications such as DC-DC converters, motor control, and load switching. Its advanced trench technology ensures minimal conduction losses, enhancing overall system efficiency. Additionally, the PSMN9R5-100PS offers fast switching speeds, reducing power dissipation in high-frequency circuits.  

The MOSFET is housed in a compact, thermally efficient package, ensuring reliable operation under high-power conditions. Its design also incorporates strong avalanche ruggedness, improving durability in transient voltage scenarios.  

Engineers favor the PSMN9R5-100PS for its balance of performance, efficiency, and reliability, making it a preferred choice in industrial, automotive, and consumer electronics applications. Whether used in power supplies or battery management systems, this component delivers consistent performance while meeting stringent power requirements.  

For detailed specifications, always refer to the manufacturer’s datasheet to ensure proper integration into your circuit design.

Application Scenarios & Design Considerations

N-channel 100 V 9.6 m鈩?standard level MOSFET in T0220

Alternative Part Number

  • IRFB4110PBF --: 100V N-channel MOSFET in TO-220 with very low RDS(on) (~4.5 mOhm), a strong drop-in upgrade for the PSMN9R5-100PS in power switching applications.
  • STP100N10F7 --: 100V N-channel power MOSFET in TO-220 with low on-resistance and high current capability, suitable replacement for the original NXP part.
  • FDP047AN08A0 --: 80V N-channel MOSFET in TO-220 with very low RDS(on), close electrical match for lower-voltage variants of the PSMN9R5-100PS in switching circuits.
  • IPP100N10N3G --: 100V N-channel MOSFET with comparable low on-resistance and current rating, widely available and a common drop-in for 100V power switching designs.
  • STP100N10F7 --: 100V N-channel power MOSFET with similar RDS(on) and current capability, suitable replacement in switching and power management circuits.
  • IRFB4110 --: 100V N-channel MOSFET with low on-resistance and high current rating, a well-known alternative for similar power switching applications.

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