(IRFR012) HEXFET Transistors The IRFR010 is a power MOSFET manufactured by Samsung. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:
### **Specifications:**
- **Manufacturer:** Samsung
- **Type:** N-Channel Power MOSFET
- **Drain-Source Voltage (VDSS):** 60V
- **Continuous Drain Current (ID):** 10A
- **Pulsed Drain Current (IDM):** 40A
- **Power Dissipation (PD):** 50W
- **Gate-Source Voltage (VGS):** ±20V
- **On-Resistance (RDS(on)):** 0.1Ω (max) at VGS = 10V
- **Threshold Voltage (VGS(th)):** 2V (min), 4V (max)
- **Input Capacitance (Ciss):** 500pF (typ)
- **Output Capacitance (Coss):** 150pF (typ)
- **Reverse Transfer Capacitance (Crss):** 50pF (typ)
- **Turn-On Delay Time (td(on)):** 10ns (typ)
- **Turn-Off Delay Time (td(off)):** 30ns (typ)
- **Rise Time (tr):** 20ns (typ)
- **Fall Time (tf):** 15ns (typ)
- **Package:** TO-252 (DPAK)
### **Descriptions:**
- The IRFR010 is a high-performance N-Channel MOSFET designed for power switching applications.
- It features low on-resistance and fast switching speeds, making it suitable for DC-DC converters, motor control, and power management circuits.
- The device is housed in a TO-252 package, which provides efficient thermal performance.
### **Features:**
- **Low On-Resistance:** Minimizes conduction losses.
- **Fast Switching:** Enhances efficiency in high-frequency applications.
- **High Current Handling:** Supports up to 10A continuous drain current.
- **Robust Gate Protection:** Withstands gate-source voltages up to ±20V.
- **Thermally Enhanced Package:** TO-252 (DPAK) for improved heat dissipation.
This information is based solely on the manufacturer's datasheet for the IRFR010.
