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HFP3N80 from SEMIHOW

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HFP3N80

Manufacturer: SEMIHOW

800V N-Channel MOSFET
Partnumber Manufacturer Quantity Availability
HFP3N80 SEMIHOW 20 In Stock

Description and Introduction

800V N-Channel MOSFET The HFP3N80 is a power MOSFET manufactured by SEMIHOW. Here are its key specifications:

- **Type**: N-Channel MOSFET
- **Drain-Source Voltage (VDSS)**: 800V
- **Continuous Drain Current (ID)**: 3A
- **Power Dissipation (PD)**: 40W
- **Gate-Source Voltage (VGS)**: ±30V
- **On-Resistance (RDS(on))**: 3.5Ω (max) at VGS = 10V
- **Threshold Voltage (VGS(th))**: 3V (min) to 5V (max)
- **Package**: TO-220F

These specifications are based on the manufacturer's datasheet. For detailed performance curves and application notes, refer to SEMIHOW's official documentation.

Application Scenarios & Design Considerations

800V N-Channel MOSFET

Alternative Part Number

  • STP3N80K5 --: 800 V N-channel MOSFET in TO-220 with similar 3 A class rating and low on-resistance, a direct functional replacement for switching power supplies.
  • IRFBF30 --: 800 V N-channel MOSFET with comparable voltage and current ratings, widely available and suitable for offline SMPS and ballast applications.
  • FQP3N80C --: 800 V, 3 A N-channel MOSFET in TO-220 package with similar RDS(on) and gate charge, offering a close electrical match for the original device.

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