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1SS387
SWITCHING DIODES
1SS387 TOSHIBA Diode Silicon Epitaxial Planar Type
1SS387 Ultra High Speed Switching Application Small package Low forward voltage : VF (3) = 0.98V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.5pF (typ.)
Maximum Ratings (Ta = 25°C) : Mounted on a glass epoxy circuit board of 20 × 20mm, pad dimension of 4 × 4mm.
Electrical Characteristics (Ta = 25°C) VF (1)
Weight: 1.4mg
Unit: mm
