1SS385 ,Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching1SS385 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385 High Speed Switching Unit: m ..
1SS385F ,Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching1SS385F TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385F High Speed Switching Unit: ..
1SS385FV ,Small-signal Schottky barrier diodeElectrical Characteristics (Ta = 25°C) TestCharacteristic Symbol Test Condition Min Typ. Max UnitCi ..
1SS387 ,SWITCHING DIODES1SS387 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS387 Ultra High Speed Switching Application ..
1SS387CT ,Switching diodeAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 ) )a aa aCharacteristic ..
1SS388 ,SWITCHING DIODES1SS388 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS388 High Speed Switching Applica ..
2560A , Pulse Dialer
2576 ,5-AmpAdjustableRegulatorsElectrical CharacteristicsSymbol Parameter Conditions LM338 UnitsMin Typ MaxV Reference Voltage 3V ..
25AA256I/SN , 256K SPI Bus Serial EEPROM
25AA256-I/SN , 256K SPI Bus Serial EEPROM
25AA256T-I/SN , 256K SPI Bus Serial EEPROM
25C02 , 1K/2K/4K/8K/16K SPI Serial CMOS E2PROM
1SS385
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching
1SS385 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS385 High Speed Switching Low forward voltage: VF (2) = 0.23V (typ.) @IF = 5mA Small package
Maximum Ratings (Ta = 25°C) *: Unit rating. Total rating = unit rating × 1.5
Electrical Characteristics (Ta = 25°C) ― 20
Equivalent Circuit (Top View)
Marking Weight: 2.4mg
Unit: mm
