| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 1SS119 |
HIT |
N/a |
2000 |
 |
Silicon Epitaxial Planar Diode for High Speed Switching |
| 1SS119 |
HITACHI |
N/a |
9962 |
|
Silicon Epitaxial Planar Diode for High Speed Switching |
1SS119-25TD RENESAS
1SS119-25TG RENESAS
1SS119 , Silicon Epitaxial Planar Diode for High Speed Switching
1SS123 ,SILICON SWITCHING DIODEELECTRICAL CHARACTERISTICS (Ta = 25 oC)
CHARACTERISTIC SYMBOL. . . . TEST CONDITIONS
i IF =1.o ..
1SS123-T1B ,Silicon switching diodeELECTRICAL CHARACTERISTICS (Ta = 25 oC)
CHARACTERISTIC SYMBOL. . . . TEST CONDITIONS
i IF =1.o ..
1SS123-T2B ,Silicon switching diodeapplications including switching, limiter, clipper.
0 Double diode configuration assures economi ..
1SS133T-77 , Switching diode
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2501N , Dual N-Channel 2.5V Specified PowerTrench MOSFET
250R05L3R3CV4T , MULTI-LAYER HIGH-Q CAPACITORS
