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10BQ040TRPBFIRN/a60000avaiSCHOTTKY RECTIFIER


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10BQ040TRPBF
SCHOTTKY RECTIFIER
International
IéaR Rectifier
Bulletin PD-2.397 rev.G 07/04
10BQ040
SCHOTTKY RECTIFIER
Major Ratings and Characteristics
|F(AV) = 1 Amp
VR = 40V
Description! Features
The 1080040 surface-mount Schottky rectifier has been de-
Characteristics 10BQO4O Units signed for applications requiring low forward drop and very
small foot prints on PC boards. Typical applications are in disk
IF(AV) Rectangularwaveform 1.0 A drives, switching power supplies, converters, free-wheeling
diodes, battery charging, and reverse battery protection.
VRRM 40 V . Small foot print, surface mountable
' I Low forward voltage drop
|FSM @ tp _ 5 ps sme 430 A . High frequency operation
0 . Guard ring for enhanced ruggedness and long term
VF @1.0Apk,TJ=125 C 0.49 V reliability
T: range -55 to 150 ''C
Case Styles
10BQ040
Cathode Anode
o-M--'

10BQ040 International
Bulletin PD-2.397 rev.G 07/04 TOR Rectifier
Voltage Ratings
Part number 1080040
VR Max. DC Reverse Voltage (V)
VRWIVI Max. Working Peak Reverse Voltage (V) 40
Absolute Maximum Ratings
Parameters 1080 Units Conditions
IHAV) Max.Average Forward Current 1.0 A 50% duty cyc|e@TL=112°C,rectangu|ar waveform
IFSM Max.PeakOneCydeNon-Repet1ive 430 A 5ps Sine or3ps Rect. pulse Following any rated
load condition and
Surge Current 45 10ms Sine or 6ms Rect. pulse with rated VRRMapplied
EAS Non- Repetitive Avalanche Energy 3.0 mJ To-- 25 °C,IAS=1A,L= 6mH
I Repetitive Avalanche Current 1.0 A Current decaying linearlytozeroin1 usec
AR Frequency limited by T, max. Va = 1.5 er typical
Electrical Specifcations
Parameters 10BQ Units Conditions
VFM Max. Forward Voltage Drop (1) 0.53 V @ IA T, = 25 ''C
* See Fig. 1 0.70 V @ 2A
0.49 V @ IA To-- 125°C
0.64 V @ 2A
I Ma . Re erse Leaka e C rrent 1 0.1 mA T = 25 "C
RM x V g u ( ) J VR = rated v,,
*See Fig.2 4 mA TJ=125°C
c, Typical Junction Capacitance 80 pF VR = 5VDC, (test signal range 100kHz to 1MHz) 25°C
LS Typical Series Inductance 2.0 nH Measured lead to lead 5mm from package body
dv/dt Max. Volatge Rate of Charge 10000 W us
(Rated VR)
(1) Pulse VWdth < 300ps, Duty Cycle < 2%
Thermal-Mechanical Specifications
Parameters 1080 Units Conditions
T J Max.Junction Temperature Range (*) -55 to 150 ''C
Tstg Max. Storage Temperature Range -55 to 150 ''C
thJL Max.Thermal Resistance Junction 36 "CA/V DC operation
to Lead (**)
RmJA Max.Thermal Resistance Junction 80 “GM
to Ambient
wt Approximate Weight 0.10(0.003) g(oz.)
Case Style SMB Similar DO-214AA
Device Marking IRIF
( ) 1'l-1 1, thermal runaway condition foradiode on its own heatsink
dT] Rth(j-a)
C') Mounted 1 inch square PCB
2
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