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STTH802CB-TR
HIGH EFFICIENCY ULTRAFAST DIODE
STTH802CT/CB/CFPApril 2002-Ed:1A
HIGH EFFICIENCY ULTRAFAST DIODE
Dual centertap rectifier suitedfor Switch Mode
Power Supplies and High frequency DCto DC
converters.
Packagedin DPAK, TO-220ABor TO-220FPAB.
This deviceis intendedfor useinlow voltage, high
frequency inverters, free wheeling and polarity
protection applications.
DESCRIPTION Suitedfor SMPS Low losses Low forward and reverse recovery times High surge current capability High junction temperature Insulated package: TO-220FPAB
FEATURES AND BENEFITS
ABSOLUTE RATINGS (limiting values)
MAIN PRODUCT CHARACTERISTICS
STTH802/CT/CB/CFPPulse test:*tp= 5ms,δ <2%tp= 380μs,δ <2% evaluatethe maximum conduction losses usethe following equation:
P=0.80xIF(AV)+ 0.037IF2 (RMS)
STATIC ELECTRICAL CHARACTERISTICSWhenthe diodes1 and2are used simultaneously:ΔTj (diode1)= P(diode1)x Rth(j-c) (per diode)+ P(diode2)x Rth(c)
THERMAL PARAMETERS
DYNAMIC ELECTRICAL CHARACTERISTICS
STTH802/CT/CB/CFP
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 (W)F(av)
Fig.1: Average forward power dissipation versus
average forward current (per diode).
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0(A)M
Fig.2: Peak current versus form factor (per diode).
0.00.20.40.60.81.01.21.41.61.82.02.22.42.62.8(A)FM
Fig.3: Forward voltage drop versus forward
current (per diode).
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
Zth(j-c) / Rth(j-c)
Fig. 4-2: Relative variationof thermal impedance
junctionto case versus duration (TO-220FPAB).
1.E-03 1.E-02 1.E-01 1.E+00
Zth(j-c) / Rth(j-c)
Fig. 4-1: Relative variationof thermal impedance
junctionto case versus pulse duration (TO-220AB,
DPAK).
1.E-03 1.E-02 1.E-01 1.E+00(A)M
Fig. 5-1: Non repetitive surge peak forward
current versus overload duration per diode
(TO-220AB, DPAK).
STTH802/CT/CB/CFP
1.E-03 1.E-02 1.E-01 1.E+00(A)M
Fig. 5-2: Non repetitive surge peak forward
current versus overload duration per diode
(TO-220FPAB).
5.0 25 50 75 100 125 150 175 )(A)F(av
Fig.6: Average forward current versus ambient
temperature(δ= 0.5,per diode).
100 10 100 1000
C(pF)
Fig.7: Junction capacitance versus reverse
voltage applied (typical values,per diode).
1000 100 1000 (nC)RR
Fig.8: Reverse recovery charges versus dIF/dt
(90% confidence,per diode).
100.0 100 1000(A)RM
Fig.9: Peak reverse recovery current versus
dIF/dt (90% confidence,per diode).
1.4 25 50 75 100 125 150;I [Tj] / Q;I [Tj = 125°C]RRRM RRRM
Fig. 10: Dynamic parameters versus junction
temperature.
STTH802CT/CB/CFP
100 2 4 6 8 1012 1416 1820
Rth (°CW)(j-a)
Fig. 11: Thermal resistance junctionto ambient
versus copper surface undertab (Epoxy printed
circuit board FR4, copper thickness: 35μm)for
DPAK.
PACKAGE MECHANICAL DATATO-220AB
STTH802CT/CB/CFP
PACKAGE MECHANICAL DATADPAK
FOOTPRINT
