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T6668 ,-0.3 to +6.0V; V(in/out): -0.3 to +0.3V; CMOS LSI for voice recording and reproducing using the ADM systemELIE D " '3tP17iiYH1 DDELI‘ILIE Ell: .TOSB T6668_1||
TOSHIBA (UC/UP)
1. GENERAL
The T6668 is ..
STTH302
HIGH EFFICIENCY ULTRAFAST DIODE
STTH302HIGH EFFICIENCY ULTRAFAST DIODE Verylow conduction losses Negligible switching losses Low forward and reverse recovery times High junction temperature
FEATURES AND BENEFITSThe STTH302 whichis using ST's new 200V
planar technology,is specially suitedfor switching
mode base drive& transistor circuits.
The deviceis also intendedfor useasa free
wheeling diodein power supplies and other power
switching applications.
DESCRIPTION
ABSOLUTE RATINGS (limiting values)
MAIN PRODUCT CHARACTERISTICSOn infinite heatsinkwith 10mmlead length.
THERMAL PARAMETERS
STTH302Pulse test:*tp=5ms,δ <2%tp=380μs,δ <2% evaluatethe maximum conduction losses usethe following equations:
P=0.60xIF(AV)+ 0.05IF2 (RMS)
STATIC ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
STTH302
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
PF(av)(W)
Fig.1: Average forward power dissipation versus
average forward current.
3.5 25 50 75 100 125 150 175
IF(av)(A)
Fig.2: Average forward current versus ambient
temperature (δ=0.5).
10152025
Rth(°C/W)
Fig.3: Thermal resistance versus lead length.
1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
Zth(j-a)/Rth(j-a)
Fig.4: Relative variationof thermal impedance
junction ambient versus pulse duration (printed
circuit board epoxy FR4, LIeads= 10mm).
100 10 100 1000
C(pF)
Fig.6: Junction capacitance versus reverse
voltage applied (typical values).
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
IFM(A)
Fig.5: Forward voltage drop versus forward
current.
STTH302 10 100 1000
IRM(A)
Fig.8: Peak reverse recovery current versus dIF/dt
(90% confidence).
100 10 100 1000
trr(ns)
Fig.7: Reverse recovery time versus dIF/dt (90%
confidence).
5.0 50 75 100 125 150 175
IRM; trr;Qrr[Tj]/IRM; trr;Qrr[Tj=25°C]
Fig.9: Relative variationsof dynamic parameters
versus junction temperature.
STTH302
PACKAGE MECHANICAL DATADO-201AD
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implicationor otherwise underany patentor patent rightsof STMicroelectronics. Specifications mentionedinthis publicationare subjectto
change without notice.This publication supersedesand replacesall information previously supplied.
STMicroelectronics productsarenot authorizedforuseas critical componentsinlife support devicesor systems without express writtenap-
provalof STMicroelectronics.
TheSTlogoisa registered trademarkof STMicroelectronics 2001 STMicroelectronics- PrintedinItaly-All rights reserved.
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http:// White band indicates cathode Epoxy meets UL94,V0
:
www.ic-phoenix.com
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