STTH3012D ,Ultrafast recoveryapplications. The improved performance in low leakage current, and therefore thermal runaway guard ..
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T6668 ,-0.3 to +6.0V; V(in/out): -0.3 to +0.3V; CMOS LSI for voice recording and reproducing using the ADM systemELIE D " '3tP17iiYH1 DDELI‘ILIE Ell: .TOSB T6668_1||
TOSHIBA (UC/UP)
1. GENERAL
The T6668 is ..
STTH3012D
Ultrafast recovery
March 2006 Rev 1 1/9
STTH3012Ultrafast recovery - 1200 V diode
Main product characteristics
Features and benefits Ultrafast, soft recovery Very low conduction and switching losses High frequency and/or high pulsed current
operation High reverse voltage capability High junction temperature
DescriptionThe high quality design of this diode has
produced a device with low leakage current,
regularly reproducible characteristics and intrinsic
ruggedness. These characteristics make it ideal
for heavy duty applications that demand long term
reliability.
Such demanding applications include industrial
power supplies, motor control, and similar
mission-critical systems that require rectification
and freewheeling. These diodes also fit into
auxiliary functions such as snubber, bootstrap,
and demagnetization applications.
The improved performance in low leakage
current, and therefore thermal runaway guard
band, is an immediate competitive advantage for
this device.
Order codes
Characteristics STTH30122/9
1 Characteristics To evaluate the conduction losses use the following equation:
P = 1.60 x IF(AV) + 0.012 IF2 (RMS)
Table 1. Absolute ratings (limiting values at 25° C, unless otherwise specified)
Table 2. Thermal parameters
Table 3. Static electrical characteristics Pulse test: tp = 5 ms, δ < 2 % Pulse test: tp = 380 µs, δ < 2 %
STTH3012 Characteristics 3/9
Table 4. Dynamic characteristics
Figure 1. Conduction losses versus
average current
Figure 2. Forward voltage drop versus
forward current
Characteristics STTH30124/9
Figure 3. Relative variation of thermal
impedance junction to case
versus pulse duration
Figure 4. Peak reverse recovery current
versus dIF/dt (typical values)
Figure 5. Reverse recovery time versus F /dt (typical values)
Figure 6. Reverse recovery charges versus F /dt (typical values)
Figure 7. Softness factor versus dIF/dt
(typical values)
Figure 8. Relative variations of dynamic
parameters versus junction
temperature
STTH3012 Characteristics 5/9
Figure 9. Transient peak forward voltage
versus dIF/dt (typical values)
Figure 10. Forward recovery time versus dIF/dt
(typical values)
Figure 11. Junction capacitance versus
reverse voltage applied (typical
values)
Package information STTH30126/9
2 Package informationEpoxy meets UL94, V0
Cooling method: by conduction (C)
Recommended torque value: 0.55 Nm (TO-220AC)
Recommended torque value: 0.80 Nm (DO-247)
Maximum torque value: 0.7 Nm (TO-220AC)
Maximum torque value: 1.0 Nm (DO-247)
Table 5. DO-247 dimensions
