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Partno	Mfg	Dc	Qty	Available	Descript
STTH1210D |STTH1210D	ST	N/a	5200	avai	Ultrafast recovery

STTH1210D ,Ultrafast recoveryapplications. The improved performance in low leakage current, and therefore thermal runaway guard ..
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STTH1210D
Ultrafast recovery
March 2006 Rev 1 1/11
STTH1210
Ultrafast recovery - high voltage diode
Main product characteristics
Features and benefits Ultrafast, soft recovery Very low conduction and switching losses High frequency and/or high pulsed current
operation High reverse voltage capability High junction temperature Insulated packages: TO-220Ins
Electrical insulation = 2500 VRMS
Capacitance = 7 pF TO-220FPAC
Electrical insulation = 2500 VRMS
Capacitance = 12 pF
Description
The high quality design of this diode has
produced a device with low leakage current,
regularly reproducible characteristics and intrinsic
ruggedness. These characteristics make it ideal
for heavy duty applications that demand long term
reliability.
Such demanding applications include industrial
power supplies, motor control, and similar
mission-critical systems that require rectification
and freewheeling. These diodes also fit into
auxiliary functions such as snubber, bootstrap,
and demagnetization applications.
The improved performance in low leakage
current, and therefore thermal runaway guard
band, is an immediate competitive advantage for
this device.
Order codes
Characteristics STTH1210
2/11
1 Characteristics



To evaluate the conduction losses use the following equation:
P = 1.3 x IF(AV) + 0.033 IF2 (RMS)
Table 1. Absolute ratings (limiting values at 25° C, unless otherwise specified)
Table 2. Thermal parameters
Table 3. Static electrical characteristics Pulse test: tp = 5 ms, δ < 2 % Pulse test: tp = 380 µs, δ < 2 %
STTH1210 Characteristics
3/11



Table 4. Dynamic characteristics
Figure 1. Conduction losses versus
average current
Figure 2. Forward voltage drop versus
forward current
Figure 3. Relative variation of thermal
impedance junction to case
versus pulse duration
Figure 4. Relative variation of thermal
impedance junction to case versus
pulse duration
Characteristics STTH1210
4/11



Figure 5. Peak reverse recovery current
versus dIF/dt (typical values)
Figure 6. Reverse recovery time versus dIF/dt
(typical values)
Figure 7. Reverse recovery charges
versus dIF/dt (typical values)
Figure 8. Softness factor versus dIF/dt
(typical values)
Figure 9. Relative variations of dynamic
parameters versus junction
temperature
Figure 10. Transient peak forward voltage
versus dIF /dt (typical values)
STTH1210 Characteristics
5/11


Figure 11. Forward recovery time versus
dIF/dt (typical values)
Figure 12. Junction capacitance versus
reverse voltage applied (typical
values)
Figure 13. Thermal resistance junction to
ambient versus copper surface
under tab (Epoxy printed circuit
board FR4, ecu = 35 µm)
Package information STTH1210
6/11
2 Package information
Epoxy meets UL94, V0
Cooling method: by conduction (C)
Recommended torque value: 0.55 Nm (TO-220AC, TC-220Ins, TO-220FPAC)
Maximum torque value: 0.7 Nm (TO-220AC, TO-220Ins, TO-220FPAC)
Table 5. T0-220AC dimensions