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Partno	Mfg	Dc	Qty	Available	Descript
STTA9012TV1	ST	N/a	2	avai	TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE
STTA9012TV2	ST	N/a	8	avai	TURBOSWITCH

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STTH1002CT ,HIGH EFFICIENCY ULTRAFAST DIODEFEATURES AND BENEFITS A12TO-220AB I PAK■ Suited for SMPSSTTH1002CT STTH1002CR■ Low lossesK■ Low for ..
T6 ,1/4 in Multiturn Fully Sealed Container, Military and Professional GradeFEATURES• Military and professional grade• 0.25 Watt at 85°C• CECC 41 101-005 (A, B, C, D)• MIL-R-2 ..
T620600W ,SNUBBERLESS TRIACFEATURESA An I =6A 2 1TRMSn V =V = 600VDRM RRMGn EXCELLENT SWITCHING PERFORMANCESn INSULATING VOLTA ..
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STTA9012TV1-STTA9012TV2
TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE
ISOTOP and TURBOSWITCH are trademarks of STMicroelectronics.
November1999 - Ed: 6B
ULTRA-FAST, SOFT RECOVERY.
VERY LOW OVERALL POWER LOSSES IN
BOTH THE DIODE AND THE COMPANION
TRANSISTOR.
HIGH FREQUENCY AND/OR HIGH PULSED
CURRENT OPERATION.
HIGH REVERSE VOLTAGE CAPABILITY.
LOW INDUCTANCE PACKAGE < 5 nH.
INSULATED PACKAGE :
Electrical insulation : 2500VRMS
Capacitance : < 45pF.
FEATURES AND BENEFITS
TURBOSWITCH 1200V drastically cuts losses in
all high voltage operations which require extremely
fast, soft and noise-free power diodes. Due to their
optimized switching performances they also highly
decrease power losses in any associated
switching IGBT or MOSFET in all "freewheel
mode" operations.
They are particularly suitable in motor control
circuitries, or in the primary of SMPS as snubber,
clamping or demagnetizing diodes. They are also
suitable for secondary of SMPS as high voltage
rectifier diodes.
DESCRIPTION
MAIN PRODUCT CHARACTERISTICS
ABSOLUTE RATINGS (limiting values, per diode)
STTA9012TV1/2
TURBOSWITCH TM ULTRA-FAST HIGH VOLTAGE DIODE
1/8
Test pulses : * tp = 380 μs, δ < 2%
** tp = 5 ms , δ < 2%
STATIC ELECTRICAL CHARACTERISTICS (per diode)
THERMAL AND POWER DATA (per diode)
DYNAMIC ELECTRICAL CHARACTERISTICS (per diode)
TURN-OFF SWITCHING
TURN-ON SWITCHING
To evaluate the maximum conduction losses use the following equation :
P = Vto x IF(AV) + rd x IF2 (RMS)
STTA9012TV1/2
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5 10 15 20 25 30 35 40 45 500P1(W)
Fig. 1: Conduction losses versus average current
(per diode).
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.01
IFM(A)
Fig. 2: Forward voltage drop versus forward
current (maximum values, per diode).
1E-3 1E-2 1E-1 1E+0 5E+00.0
Zth(j-c)/Rth(j-c)
Fig. 3: Relative variation of thermal impedance
junction to case versus pulse duration (per diode). 100 200 300 400 5000
trr(ns)
Fig. 5: Reverse recovery time versus dIF/dt (90%
confidence, per diode). 100 200 300 400 5000
IRM(A)
Fig. 4: Peak reverse recovery current versus dIF/dt
(90% confidence, per diode). 100 200 300 400 5000.60
S factor
Fig. 6: Softness factor (tb/ta) versus dIF/dt (typical
values).
STTA9012TV1/2
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50 75 100 125Fig. 7: Relative variation of dynamic parameters
versus junction temperature (reference: Tj=125°C). 100 200 300 400 5000
VFP(V)
Fig. 8: Transient peak forward voltage versus
dIF/dt (90% confidence, per diode). 100 200 300 400 500100
tfr(ns)
Fig. 9: Forward recovery time versus dIF/dt (90%
confidence, per diode).
STTA9012TV1/2
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Fig. A : "FREEWHEEL" MODE.
The 1200V TURBOSWITCH series has been
designed to provide the lowest overall power
losses in all high frequency or high pulsed current
operations. In such applications (Fig A to D),the
way of calculating the power losses is given below :
APPLICATION DATA
STTA9012TV1/2
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Fig. E: STATIC CHARACTERISTICS
Conduction losses :
P1 = Vt0 . IF(AV) + Rd . IF2 (RMS)
Reverse losses :
P2 = VR . IR . (1 - δ)
Fig. B : SNUBBER DIODE. Fig. C : DEMAGNETIZING DIODE.
Fig. D : RECTIFIER DIODE.
STATIC & DYNAMIC CHARACTERISTICS . POWER LOSSES .
STTA9012TV1/2
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