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21DQ04NIECN/a19500avai40V 2A Schottky Discrete Diode in a DO-204AL package
21DQ04N/a7794avai40V 2A Schottky Discrete Diode in a DO-204AL package


21DQ04 ,40V 2A Schottky Discrete Diode in a DO-204AL packageFeaturesMajor Ratings and CharacteristicsThe 21DQ04 axial leaded Schottky rectifier has been opti-C ..
21DQ04 ,40V 2A Schottky Discrete Diode in a DO-204AL packageapplications are in switching power sup-I Rectangular 2 A plies, converters, free-wheeling diodes, ..
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21DQ04
40V 2A Schottky Discrete Diode in a DO-204AL package
International
:23 Rectifier
Bulletin PD-20707 rev.C 03/03
21 DQO4
SCHOTTKY RECTIFIER
Major Ratings and Characteristics
Characteristics 21 D004 Units
IHAV) Rectangular 2 A
waveform
VRRM 40 V
VF @2Apk,TJ=125°C 0.5 V
T: range -40to150 "C
Description/Features
The 21DQO4 axial leaded Schottky rectifier has been opti-
mized for very low forward voltage drop, with moderate
leakage. Typical applications are in switching power sup-
plies, converters, free-wheeling diodes, and reverse battery
protection.
. Low profile, axial leaded outline
. High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
. Very low forward voltage drop
. High frequency operation
. Guard ring for enhanced ruggedness and long term
reliability
CASE STYLE AND DIMENSIONS
2.70 (0.106)
2. 29 o. 090) 0IA,
27.0 (1.06) MIN.
(2 PLCS.)
0.86 (0.034) DIA.
0.72 (0 028)
(2 PLCS. )
5.21 (0.205)
GAYWE BAND
27.0 (115) MIN.
(2 PLUS.)
5.21 (0.205)
I tWNtx7E
1.27 (0150) MAX.
, FLASH (2 PLCS.)
0.DB(0.W)
tiiiiiiiii" L
(2 PLCS )
2, m (0106)
2. 29(0 090) mA.
Conform to JEDEC Outline DO-204AL (D0-41)
Dimensions in millimeters and inches

21 DQO4
Bulletin PD-20707 rev.C 03/03
International
IEER Rectifier
Voltage Ratings
Part number 21DQO4
VR Max. DC Reverse Voltage (V) 40
VRWM Max. Working Peak Reverse Voltage (V)
Absolute Maximum Ratings
Parameters 21DQO4 Units Conditions
IHAV) Max. Average Forward Current 2 A 50% duty cycle @ TC = 112''C, rectangularwave form
. See Fig. 4
IFSM Max.PeakOneCycle Non-Repetitive 420 5ps Sine or3ps Rect. pulse Following _a_ny rated
. A . load condmon and with
Surge Current * See Fig. 6 70 10ms Sine or 6ms Rect. pulse rated VRRM applied
EAS Non-Repetitive Avalanche Energy 5.0 mJ T, = 25 ''C, Us =1.0Amps,L=10mH
I AR Repetitive Avalanche Current 1.0 A Currentdecaying linearly to zero in 1 psec
Frequencylimited by T, max.VA=1.5xVR typical
Electrical Specifications
21 DQ04 . . .
Parameters Units Conditions
Typ. Max.
VFM Max. Forward Voltage Drop 0.49 0.55 V @ 2A T: = 25 ''C
(1) 0.60 0.65 V @ 4A
0.42 0.5 V @ 2A
T = 125 ''C
0.56 0.62 V @ 4A J
IRM Max. Reverse Leakage Current 0.01 0.50 mA T: = 25 "C V - t d V
(1) 5.2 10 mA TJ=125°C "rare R
c, Typical Junction Capacitance 130 pF VR = 5Voc(test signal range 100Khz to 1Mhz) 25°C
Ls Typical Series Inductance 8.0 nH Measured lead to lead 5mm from package body
(1) Pulse Wldth < 300ps, Duty Cycle <2%
ThermaI-Mechanical Specifications
Parameters 21DQO4 Units Conditions
T J Max. Junction Temperature Range (*) -40 to 150 "C
Tsta Max. Storage Temperature Range -40 to 150 "C
RWA Max.Thermal Resistance Junction 100 "CIW DC operation
to Ambient Without cooling fo
'ur, Typical Thermal Resistance Junction 25 "CAN DC Operation (* See Fig.4)
to Lead
wt Approximate Weight 0.33(0.012) g(oz.)
Case Style D0-204AL(DO41)
(') dPtot 1 . . . . .
__. < _.-... thermal runaway condition foradlode on its own heatsink
dT] Rth(j-a)

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