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20BQ030-20BQ030TR
30V 2A Schottky Discrete Diode in a SMB package
International
TOR Rectifier
SCHOTTKYRECTlFlER
Bulletin PD-20717 rev.F 03/03
Major Ratings and Characteristics Description! Features
Characteristics 20BQ030 Units The. 20BQ030 suffage-mount Sghottky rectifier has been
designed for applications requmng low forward drop and
small foot prints on PC boards. Typical applications are in disk
IF(AV) Rectangularwaveform 2.0 A drives, switching power supplies, converters, free-wheeling
diodes, battery charging, and reverse battery protection.
V 30 V
RRM . Small foot print, surface mountable
IFSM @tp= 5 ps sine 350 A . Very low forward voltage drop
I High frequency operation
V @2.0Apk T =125°c 0.37 V . Guard ring for enhanced ruggedness and long term
F , J . . .
reliability
T: range -55 to 150 "C
Device Marking: IR2E CATHODE ANODE
2.15 (.085)
1.80 (.071)
(.150)
(.130)
4.70 (.185)
4.10 (.161)
-qL" )
2.40(.094) /l 7
(D POLARITY Ci) PART NUMBER
2.5 TYP.
(.098 TYP.
SOLDERING PAD
1 30 ( 051 0.30 (.012) J
_ _ 0.15 (.006) 2.0 TYP. '
J76 C030) 5.60 (.220) (.079 TYP.) 4 2( 165)
5.00 (.197) _ .
4.0 (.157)
Outline SMB
Dimensions in millimeters and (inches)
For recommended footprint and soldering techniques refer to application note #AN-994
2030030 International
Bulletin PD-20717 rev. F 03/03 IEZR Rectifier
Voltage Ratings
Part number 2080030
VR Max. DC Reverse Voltage (V)
VRWM Max. Working Peak Reverse Voltage (V) 30
Absolute Maximum Ratings
Parameters 20BQ Units Conditions
IHAV) Max. Average Forward Current 2.0 A 50% duty cycle @ TL = 119 ''C, rectangularwave form.
G, Max. Peak One Cycle Non-Repetitive 350 5ps Sin.e or 3ps Rect. pulse 2ffgi,rhgg, 'Jef
Surge Current 80 10ms Sine or6ms Rect. pulse with rated l/ma, applied
EAS Non-Repetitive Avalanche Energy 3.0 mJ T: =25 "C, IAS-- 1A, L=6mH
lAR Repetitive Avalanche Current 1.0 A Current decaying linearly to zero in 1 psec
Frequency limited by T, max. Va =15er typical
Electrical Specifications
Parameters 2080 Units Conditions
I/n, Max. Forward Voltage Drop (1) 0.470 V @ 2A T, = 25 o C
0.550 V @ 4A
VFM Max. Forward Voltage Drop (1) 0.370 V © 2A T, = 125 ''C
0.470 V @ 4A
IRM Max. Reverse Leakage Current (1) 0.5 mA T: = 25 C v,, = rated VR
15 mA T J = 125 "C
c, Max. Junction Capacitance 200 pF VR = 51/oc, (test signal range 100KHz to 1Mhz) 25°C
Ls Typical Series Inductance 2.0 nH Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change 10000 V/ps
(Rated VR)
(1) Pulse VWdth < 300ps, Duty Cycle < 2%
Thermal-Mechanical Specifications
Parameters 2080 Units Conditions
T J Max.Junction Temperature Range (*) - 55 to 150 I
Tstg Max. Storage Temperature Range -55 to 150 "C
ttUL Max. Thermal Resistance Junction 25 °C/W DC operation
to Lead (**)
RthJA Max. Thermal Resistance Junction 80 °C/W
to Ambient
wt Approximate Weight 0.10(0.003) g(oz.)
Case Style SMB Similar DO-214AA
Device Marking IR2E
C) dP-tot<-1 th I diti f dd it h tsi k
dT] Rth(j-a) erma runawaycon mon ora l0 eonl sown ea sm
(**) Mounted 1 inch square PCB
2
