1V5KE43A ,Transient Voltage SuppressorsElectrical Characteristics apply in both directions.1500 Watt Transient Voltage SuppressorsAbsolute ..
1W404 , Variable Capacitance Diode
1Z0262-3 , Hybrid Couplers
1Z15 ,ZENER DIODE1Z6.2~1Z390,1Z6.8A~1Z30A TOSHIBA ZENER DIODE SILICON DIFFUSED JUNCTION TYPE 1Z6.2~1Z390,1Z6.8A~1Z3 ..
1Z150 ,Silicon diffused type zener diode. Typ zener voltage 150 V.1Z6.2~1Z390,1Z6.8A~1Z30A TOSHIBA ZENER DIODE SILICON DIFFUSED JUNCTION TYPE 1Z6.2~1Z390,1Z6.8A~1Z3 ..
1Z150 ,Silicon diffused type zener diode. Typ zener voltage 150 V.1Z6.2~1Z390,1Z6.8A~1Z30A TOSHIBA ZENER DIODE SILICON DIFFUSED JUNCTION TYPE 1Z6.2~1Z390,1Z6.8A~1Z3 ..
2576 ,5-AmpAdjustableRegulatorsElectrical CharacteristicsSymbol Parameter Conditions LM338 UnitsMin Typ MaxV Reference Voltage 3V ..
25AA256I/SN , 256K SPI Bus Serial EEPROM
25AA256-I/SN , 256K SPI Bus Serial EEPROM
25AA256T-I/SN , 256K SPI Bus Serial EEPROM
25C02 , 1K/2K/4K/8K/16K SPI Serial CMOS E2PROM
25C04 , 1K/2K/4K/8K/16K SPI Serial CMOS E2PROM
1V5KE43A
Transient Voltage Suppressors
1V5KE6V8(C)A - 1V5KE440(C)A Transient Voltage Suppressors 1V5KE6V8(C)A - 1V5KE440(C)A Features • Glass passivated junction. • 1500W Peak Pulse Power capability at 1.0 ms. • Excellent clamping capability. • Low incremental surge resistance. • Fast response time; typically less than 1.0 ps from 0 volts to BV for DO-201AE unidirectional and 5.0 ns for COLOR BAND DENOTES CATHODE bidirectional. ON UNIDIRECTIONAL DEVICES ONLY. NO COLOR BAND ON BIDIRECTIONAL DEVICES. • Typical I less than 1.0 μA above 10V. R • UL certified, UL #E210467. DEVICES FOR BIPOLAR APPLICATIONS - Bidirectional types use CA suffix. - Electrical Characteristics apply in both directions. 1500 Watt Transient Voltage Suppressors Absolute Maximum Ratings* T = 25°C unless otherwise noted A Symbol Parameter Value Units P Peak Pulse Power Dissipation at T=1ms 1500 W PPM P I Peak Pulse Current see table A PPM P Power Dissipation D 5.0 W .375 " lead length @ T = 75°C A I Non-repetitive Peak Forward Surge Current FSM 200 A superimposed on rated load (JEDEC method) (Note 1) Storage Temperature Range -65 to +175 °C T stg Operating Junction Temperature + 175 T °C J *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Note 1: Measured on 8.3 ms single half-sine wave; Duty cycle = 4 pulses per minute maximum. 1V5KE6V8(C)A - V5KE440(C)A, Rev. D 2002
