1SV322 ,Diode Silicon Epitaxial Planar Type TCXO/VCO1SV322 TOSHIBA Diode Silicon Epitaxial Planar Type 1SV322 TCXO/VCO Unit: mm High capacitan ..
1SV323 ,Diode Silicon Epitaxial Planar Type TCXO/VCO1SV323 TOSHIBA Diode Silicon Epitaxial Planar Type 1SV323 TCXO/VCO Unit: mm High capacitan ..
1SV324 ,Diode Silicon Epitaxial Planar Type TCXO/VCO1SV324 TOSHIBA Diode Silicon Epitaxial Planar Type 1SV324 TCXO/VCO Unit: mm High capacitan ..
1SV325 ,Diode Silicon Epitaxial Planar Type TCXO/VCO1SV325 TOSHIBA Diode Silicon Epitaxial Planar Type 1SV325 TCXO/VCO Unit: mm High capacitan ..
1SV328 ,Diode Silicon Epitaxial Planar Type VCO for UHF Band Radio1SV328 TOSHIBA Diode Silicon Epitaxial Planar Type 1SV328 VCO for UHF Band Radio Unit: mm ..
1SV329 ,Diode Silicon Epitaxial Planar Type VCO for UHF Band Radio1SV329 TOSHIBA Diode Silicon Epitaxial Planar Type 1SV329 VCO for UHF Band Radio Unit: mm ..
2560A , Pulse Dialer
2576 ,5-AmpAdjustableRegulatorsElectrical CharacteristicsSymbol Parameter Conditions LM338 UnitsMin Typ MaxV Reference Voltage 3V ..
25AA256I/SN , 256K SPI Bus Serial EEPROM
25AA256-I/SN , 256K SPI Bus Serial EEPROM
25AA256T-I/SN , 256K SPI Bus Serial EEPROM
25C02 , 1K/2K/4K/8K/16K SPI Serial CMOS E2PROM
1SV322
Diode Silicon Epitaxial Planar Type TCXO/VCO
1SV322 TOSHIBA Diode Silicon Epitaxial Planar Type
1SV322 TCXO/VCO High capacitance ratio: C1 V/C4 V = 4.3 (typ.) Low series resistance: rs = 0.4 Ω (typ.) Useful for small size tuner.
Maximum Ratings (Ta ��� � 25°C)
Electrical Characteristics (Ta ��� � 25°C) rs VR � 4 V, f � 100 MHz
Note: Signal level when capacitance is measured: Vsig � 500 mVrms
Marking Unit: mm
Weight: 0.004 g (typ.)
