1SV314 ,DIODE SILICON EPITAXIAL PLANAR TYPE VCO FOR UHF BAND RADIO1SV314 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SV314 VCO FOR UHF BAND RADIO Unit: mmHig ..
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2560A , Pulse Dialer
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25AA256I/SN , 256K SPI Bus Serial EEPROM
25AA256-I/SN , 256K SPI Bus Serial EEPROM
25AA256T-I/SN , 256K SPI Bus Serial EEPROM
25C02 , 1K/2K/4K/8K/16K SPI Serial CMOS E2PROM
1SV314
DIODE SILICON EPITAXIAL PLANAR TYPE VCO FOR UHF BAND RADIO
1SV314 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE
1SV314 VCO FOR UHF BAND RADIO High Capacitance Ratio : C0.5 V / C2.5 V = 2.5 (Typ.) Low Series Resistance : rs = 0.35 Ω (Typ.) Useful for Small Size Tuner
MAXIMUM RATINGS (Ta = 25°C)
ELECTRICAL CHARACTERISTICS (Ta = 25°C) rs VR = 1 V, f = 470 MHz
MARKING Unit: mm
000707EAA2
