1SV313 ,DIODE SILICON EPITAXIAL PLANAR TYPE VCO FOR UHF BAND RADIO1SV313 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SV313 VCO FOR UHF BAND RADIO Unit in mm Hi ..
1SV314 ,DIODE SILICON EPITAXIAL PLANAR TYPE VCO FOR UHF BAND RADIO1SV314 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SV314 VCO FOR UHF BAND RADIO Unit: mmHig ..
1SV315 ,Variabe resistance Attenuator UseFeatures Package Dimensions · Ultrasmall-sized package facilitates high-densityunit:mmmounting and ..
1SV316 ,Variabe resistance Attenuator UseFeatures Package Dimensions · Ultrasmall-sized package facilitates high-densityunit:mmmounting and ..
1SV322 ,Diode Silicon Epitaxial Planar Type TCXO/VCO1SV322 TOSHIBA Diode Silicon Epitaxial Planar Type 1SV322 TCXO/VCO Unit: mm High capacitan ..
1SV323 ,Diode Silicon Epitaxial Planar Type TCXO/VCO1SV323 TOSHIBA Diode Silicon Epitaxial Planar Type 1SV323 TCXO/VCO Unit: mm High capacitan ..
2560A , Pulse Dialer
2576 ,5-AmpAdjustableRegulatorsElectrical CharacteristicsSymbol Parameter Conditions LM338 UnitsMin Typ MaxV Reference Voltage 3V ..
25AA256I/SN , 256K SPI Bus Serial EEPROM
25AA256-I/SN , 256K SPI Bus Serial EEPROM
25AA256T-I/SN , 256K SPI Bus Serial EEPROM
25C02 , 1K/2K/4K/8K/16K SPI Serial CMOS E2PROM
1SV313
DIODE SILICON EPITAXIAL PLANAR TYPE VCO FOR UHF BAND RADIO
1SV313 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE
1SV313 VCO FOR UHF BAND RADIO High Capacitance Ratio : C0.5V/C2.5V = 2.5 (Typ.) Low Series Resistance : rs = 0.35Ω (Typ.) Useful for Small Size Tuner
MAXIMUM RATINGS (Ta = 25°C)
ELECTRICAL CHARACTERISTICS (Ta = 25°C) rs VR = 1 V, f = 470 MHz
MARKING 000707EAA2
