1SV147 ,Silicon epitaxial planar type variable capacitance diode.ELECTRICAL CHARACTERISTICS (Ta = 25°C) Weig t 0 3gCHARACTERISTIC SYMBOL TEST CONDITION UNIT
Reve ..
1SV149 ,Silicon epitaxial planar type variable capacitance diode.TOSHIBA 1DTS(HeCTlr/0PT()1 b? oanrvii'ieso nijmzm t: r9097250 TOSHIBA (DISCRETE/OPTO) - - - - 67C 0 ..
1SV153 ,SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODETOSHIBA 4nTSCRiiyl'E/()pT()1 la'? DEI‘ID'WESD -fimy:iifiN E. I
90972S0_TosHrBA (DISCRETE/OPTO) - ..
1SV160 ,Silicon epitaxial planar type variable capacitance diode.1SV160 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV160 AFC Application ..
1SV161 ,Silicon epitaxial planar type variable capacitance diode.TOSHIBA f01SCRETE/0pT01L -9097250 T2irrrr3A _fDlscrRfrrE/oF'To), --- 67C ’09377 DT-o7-[qSilicon Epi ..
1SV172 ,Diode Silicon Epitaxial Pin TypeApplications Unit: mm Useful for small size tuner Small total capacitance: C = 0.25 pF (typ ..
2560A , Pulse Dialer
2576 ,5-AmpAdjustableRegulatorsElectrical CharacteristicsSymbol Parameter Conditions LM338 UnitsMin Typ MaxV Reference Voltage 3V ..
25AA256I/SN , 256K SPI Bus Serial EEPROM
25AA256-I/SN , 256K SPI Bus Serial EEPROM
25AA256T-I/SN , 256K SPI Bus Serial EEPROM
25C02 , 1K/2K/4K/8K/16K SPI Serial CMOS E2PROM
1SV147
Silicon epitaxial planar type variable capacitance diode.
TOSHIBA 1SV147
TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE
1iSV1i4,7
FM RADIO BAND TUNING APPLICATIONS Unit in mm
4.2MAX,
0 Low rs : rs = 0.3 n (Typ.) : l E §
0 Small Package I l I rvi
0.55MAX. - ,
0.4 T r.e'
1 2 3 m m
MAXIMUM RATINGS (Ta = 25°C) (I 1.27127 C. 31
C5 r-'-' -'-' -, .
CHARACTERISTIC SYMBOL RATING UNIT - 1jr:y--z--_----) g
Reverse Voltage VR 15 V J /1._'e's'i,
Junction Temperature Tj 125 "C 25"
Storage Temperature Tstg -55--125 "C 1. ANODE 1
2. CATHODE l, 2
3. ANODE 2
JEDEC -
EIAJ -
TOSHIBA 1-4E2A
ELECTRICAL CHARACTERISTICS (Ta = 25°C) Weight .. 0.13g
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Reverse Voltage VR IR = 10 PA 15 - - V
Reverse Current IR VR = 15 V - - 50 nA
Capacitance C3V VR = 3 V, f = 1 MHz 28.5 - 32.5 pF
Capacitance C8V VR = 8V, f = 1 MHz 11.7 - 13.7 pF
Capacitance Ratio C3v/ cw - 2.1 - 2.6 -
Series Resistance rs C = 30 pF, f = 50 MHz (Note) - 0.3 0.5 n
(Note) .' rs test circuit
Hi o- A1
Q METER
"T" K 10%0 -
MODEL 4342A g -2 VR
A2 H T
Lo o - -
C is A1-A2 capacitance. 000707EAA2
O TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction
or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA
products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a mal unction or
failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to roperty.
In developing your desi ns, please ensure that TOSHIBA products are used within speci ied operating ranges as set forth in the most recent
TOSHIBA products speci ications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor
Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
0 The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office
equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for
usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury CUnintended Usage"). Unintended Usage include atomic ener y control instruments, airplane or spaceship instruments, transportation
instruments, traffic signal instruments, combustion control instruments, me ical instruments, all types of safety devices, etc.. Unintended Usage of
TOSHIBA products listed in this document shall be made at the customer's own risk.
2001-01-16 1/3
TOSHIBA 1SV147
Table 1: Capacitance Data
TEST CONDITION (f = 1 MHz, Ta = 25°C)
No. C2V cw C6V 08V
1 34.70 -- 35.74 28.60 .'.- 29.45 16.80 -- 17.30 11.72 - 12.07
2 35.56 ~ 36.62 29.31 -- 30.18 17.21 -- 17.72 12.01 - 12.37
3 36.44 -- 37.53 30.03 -- 30.93 17.63 '.- 18.15 12.31 _ 12.67
4 37.35 _ 38.47 30.77 ~ 31.69 18.06 -- 18.60 12.61 - 12.98
5 38.27 ' 39.41 31.53 -- 32.47 18.50 -- 19.05 12.92 - 13.30
6 18.95 ~ 19.51 13.23 - 13.62
(1) Available in matched group for capacitance to 3.0%.
C (Max.) - C (Min.)
C (Min.)
and capacitance is classified as Table 1.
s 0.03 (VR = 2--8 V)
(2) sz, C3V, GN and C8V are A1-A2 capacitance.
(3) This table is not selection guide, which means only to show the data.
(4) The number on the vinyl package (on the lable in the vinyl package) is to show the
capacitance data at each voltage in a matched group.
EXAMPLE: 5-4-3-2
(C2V) (C3v) (Csv) (C8V)
(5) The absolute capacitance value is in i0.5%.
000707EAA2'
O The information contained herein is presented only as a guide for the apflications of our products. No responsibility is assumed by TOSHIBA
CORPORATION for any infringements of intellectual property or other rights o the third parties which may result from its use. No license is granted
b implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
o T e information contained herein is subject to change without notice.
2001-01-16 2/3
TOSHIBA 1SV147
C - VR IR - VR
50 1000
f-- 1 MHz
fi? 'Nss, Ta=25°C R"
Pp 30 5
o E 100
R; \ 5
if, 20 "N, S3
0 2 4 6 8 IO
REVERSE VOLTAGE VR (V)
o 4 8 12 16
Q - VR REVERSE VOLTAGE VR (V)
' 1000 f/fMAX - VR
5: 1.0
E 500 4'''j/'
Cm 1 y
O 0.9 f
g lOpF / /
' 200 0.8 /5
// /c=o
o 2 4 6 8 10 0.7
REVERSE VOLTAGE VR (V)
i9C(Ternp.)/C(25) - Ta 0.6 f
NORMALIZED TUNING FREQUENCY f/fMAX
f=1MHz
2 4 6 8 10
REVERSE VOLTAGE VR (V)
3C(Temp.)/C(25) (%)
VARIATION OF CAPACITANCE
-25 0 25 50 75 100 125
AMBIENT TEMPERATURE Ta (°C)
2001-01-16 3/3
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