1SV103 ,VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE FM RADIO BAND TUNING APPLICATIONSELECTRICAL CHARACTERISTICS (Ta = 25°C) Weight : 0.13gCHARACTERISTIC SYMBOL TEST CONDITION UNIT
R ..
1SV103 ,VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE FM RADIO BAND TUNING APPLICATIONSAPPLICATIONS Unit in mmI 4.2MAX. I..Z=>K.N_.A'
MAXIMUM RATINGS (Ta = 25°C) L2?
CHARACTERISTIC S ..
1SV128 ,DIODE VHF~UHF BAND RF ATTENUATOR APPLICATIONSELECTRICAL CHARACTERISTICS (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNIT
Reversevo1tagelv ..
1SV147 ,Silicon epitaxial planar type variable capacitance diode.ELECTRICAL CHARACTERISTICS (Ta = 25°C) Weig t 0 3gCHARACTERISTIC SYMBOL TEST CONDITION UNIT
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1SV149 ,Silicon epitaxial planar type variable capacitance diode.TOSHIBA 1DTS(HeCTlr/0PT()1 b? oanrvii'ieso nijmzm t: r9097250 TOSHIBA (DISCRETE/OPTO) - - - - 67C 0 ..
1SV153 ,SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODETOSHIBA 4nTSCRiiyl'E/()pT()1 la'? DEI‘ID'WESD -fimy:iifiN E. I
90972S0_TosHrBA (DISCRETE/OPTO) - ..
2560A , Pulse Dialer
2576 ,5-AmpAdjustableRegulatorsElectrical CharacteristicsSymbol Parameter Conditions LM338 UnitsMin Typ MaxV Reference Voltage 3V ..
25AA256I/SN , 256K SPI Bus Serial EEPROM
25AA256-I/SN , 256K SPI Bus Serial EEPROM
25AA256T-I/SN , 256K SPI Bus Serial EEPROM
25C02 , 1K/2K/4K/8K/16K SPI Serial CMOS E2PROM
1SV101
Silicon epitaxial planar type variable capacitance diode.
TOSHIBA
TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE
1151/1101]
1SV101
FM TUNER APPLICATIONS Unit in mm
4.2MAx.
0 High Capacitance Ratio l C3v/ CgV = 2.0--2.7 E i a' ii
I I E N
0 Low Series Resistance : rs = 0.3 n (Typ.) I ll ‘}r g m
0 Small Package. EMBLJ 3
0 Low Tuning Voltage Range : 3 V-9V ' t it.
0.4 T (Y
w, 1.271.27 t 31
. 1 x-
i- 1d up- 4 il,
MAXIMUM RATINGS (Ta = 25°C)
1. ANODE
CHARACTERISTIC SYMBOL RATING UNIT 2. CATHODE
Reverse Voltage VR 15 V JEDEC -
Junction Temperature Tj 125 °C EIAJ -
Storage Temperature Range Tstg -55--125 C T OSHIB A l- 4E 1 A
Weight : 0.9 g
ELECTRICAL CHARACTERISTICS(Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Reverse Voltage VR IR = 10 PA 15 - - V
Reverse Current IR VR = 15 V - - 10 nA
Capacitance C3V VR = 3 V, f = 1 MHz 28 - 32 pF
Capacitance C9V VR = 9 V, f = 1 MHz 12 - 14 pF
Capacitance Ratio C3v/ C9V - 2.0 - 2.7
Series Resistance rs C = 30 pF, f = 50 MHz - 0.3 0.5 n
(Note) : Units are compounded in one package and are matched to 3%.
C (Max.) T-.. C (Min.) s 0.03 (VR = 3 V-9 V)
C (Min. )
and capacitance is classified as Table 1.
000707EAA2
O TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction
or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizin TOSHIBA
products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or
failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your desi ns, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent
TOSHIBA products speci ications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor
Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
o The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office
equipment, measuring1 equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for
usage in equipment t at requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury ("Unintended Usage"). Unintended Usage include atomic ener y control instruments, airplane or spaceship instruments, transportation
instruments, traffic signal instruments, combustion control instruments, me ical instruments, all types of safety devices, etc.. Unintended Usage of
TOSHIBA products listed in this document shall be made at the customer's own risk.
0 The information contained herein is presented only as a guide for the ap Iications of our products. No responsibility is assumed by TOSHIBA
CORPORATION for any infringements of intellectual property or other rights o the third parties which may result from its use. No license is granted
by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
o The information contained herein is subject to change without notice.
2001-01-16 1/3
TOSHIBA 1SV101
Table 1 :Address classification of capacitance
TEST CONDITION :f = 1MHz, Ta = 25°C Unit : pF
No. C3V C5V C7V C9V
1 28.20--29.04 20.50--21.11 15.65--16.11 12.066--12.427
2 28.85--29.71 20.97--21.59 16.01--16.49 12.343--12.713
3 29.51--30.39 21.44--22.08 16.38--16.87 12.627--13.005
4 30.19--31.09 21.94--22.59 16.76--17.26 12.917--13.304
5 30.89--31.81 22.45--23.12 17.15--17.66 13.214--13.610
6 22.97--23.65 17.54--18.06 13.518--13.923
7 23.49--24.19 17.94--18.47
(1) The capacitance value of address classification is shown with confidence to at least
i0.5% accuracy.
(2) The address is specified in the compounded package (or label).
Example
(C3v) (C5v) (C7v) (Cgv)
2001-01-16 2/3
TOSHIBA
o 2 4 6 8 IO 12 14 16
REVERSE VOLTAGE VR (V)
C - VR
0 4 8 12 16 20
REVERSE VOLTAGE VR (V)
Q - VR
0 4 8 12 16 20
REVERSE VOLTAGE VR (V)
VARIATION OF CAPACITANCE 50(Temp.)/C(25) (%)
NORMALIZED TUNING FREQUENCY f / {MAX
1SV101
60 (Temp. )/C (25) - Ta
f=1MHz
-50 -25 0 25 50 75 100
AMBIENT TEMPERATURE Ta CC)
f/ fMAx - VR
Ta = 25°C /
0.9 w,,,::,;''',''')"'''''
/,wj'','f'''
0.8 ,////
_5pF///
0.7 y'
c--,y''
0.6 E C g; L
oz, 4 6 8 10
REVERSE VOLTAGE VR (V)
2001-01-16 3/3
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