1SS426 ,Switching diodeElectrical Characteristics (Ta = 25°C) TestCharacteristics Symbol Test Condition Min Typ. Max UnitC ..
1SS427 ,Switching diodeAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 = 25 = 25 ) ) ) )a ..
1SS81 , Silicon Epitaxial Planar Diode for High Voltage Switching
1SS81 , Silicon Epitaxial Planar Diode for High Voltage Switching
1SS82 , Silicon Epitaxial Planar Diode for High Voltage Switching
1SS82 , Silicon Epitaxial Planar Diode for High Voltage Switching
2560A , Pulse Dialer
2576 ,5-AmpAdjustableRegulatorsElectrical CharacteristicsSymbol Parameter Conditions LM338 UnitsMin Typ MaxV Reference Voltage 3V ..
25AA256I/SN , 256K SPI Bus Serial EEPROM
25AA256-I/SN , 256K SPI Bus Serial EEPROM
25AA256T-I/SN , 256K SPI Bus Serial EEPROM
25C02 , 1K/2K/4K/8K/16K SPI Serial CMOS E2PROM
1SS426
Switching diode
1SS426 TOSHIBA Diode Silicon Epitaxial Planar Type
1SS426 Ultra-High Speed Switching Applications Compact 2-pin package: Ideal for high-density mounting Low forward voltage : VF (3) = 0.98 V (typ.) Fast reverse recovery time : trr = 1.6 ns (typ.) Small total capacitance : CT = 0.5 pF (typ.)
Absolute Maximum Ratings (Ta = 25°C) * : Mounted on a glass epoxy circuit board of 20 mm × 20 mm,
Cu pad dimension of 4 mm × 4 mm.
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C) Weight: 1.1 mg (typ.)
Unit: mm
