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1SS405
Small-signal Schottky barrier diode
1SS405 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS405 High Speed Switching Application Low forward voltage : VF (3) = 0.50V (typ.) Low reverse current : IR= 0.5μA (max) Small total capacitance : CT = 3.9pF (typ.)
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Mounted on a glass epoxy circuit board of 20 × 20 mm,
pad dimension of 4 × 4 mm.
Electrical Characteristics (Ta = 25°C)
Equivalent Circuit (Top View) Marking Weight: 1.4mg(Typ.)
Unit: mm
