1SS403 ,Diode Silicon Epitaxial Schottoky Barrier Type High Voltage Switching ApplicationsApplications Unit in mm Two-pin small packages are suitable for higher mounting densities. E ..
1SS404 ,SWITCHING DIODESApplications Unit: mm Tow-pin small packages are suitable for higher mounting densities Exc ..
1SS405 ,Small-signal Schottky barrier diodeElectrical Characteristics (Ta = 25°C) TestCharacteristic Symbol Test Condition Min Typ. Max UnitCi ..
1SS406 ,Small-signal Schottky barrier diodeElectrical Characteristics (Ta = 25°C) TestCharacteristic Symbol Test Condition Min Typ. Max UnitCi ..
1SS412 ,Switching diodeElectrical Characteristics (Ta = 25°C) TestCharacteristic Symbol Test Condition Min Typ. Max UnitCi ..
1SS413 ,Small-signal Schottky barrier diodeAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 = 25 = 25 ) ) ) )a ..
2560A , Pulse Dialer
2576 ,5-AmpAdjustableRegulatorsElectrical CharacteristicsSymbol Parameter Conditions LM338 UnitsMin Typ MaxV Reference Voltage 3V ..
25AA256I/SN , 256K SPI Bus Serial EEPROM
25AA256-I/SN , 256K SPI Bus Serial EEPROM
25AA256T-I/SN , 256K SPI Bus Serial EEPROM
25C02 , 1K/2K/4K/8K/16K SPI Serial CMOS E2PROM
1SS403
Diode Silicon Epitaxial Schottoky Barrier Type High Voltage Switching Applications
1SS403
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS403 High Voltage Switching Applications Two-pin small packages are suitable for higher mounting densities. Excellent in forward current and forward voltage
characteristics : VF (2) = 0.90V (typ.) Fast reverse recovery time : trr = 60ns (typ.) Small total capacitance : CT = 1.5pF (typ.)
Maximum Ratings (Ta = 25��� �C)
(*) When mounted on a glass epoxy board PCB: 20 mm × 20 mm,
with copper pad 4 mm × 4 mm.
Electrical Characteristics (Ta = 25��� �C)
VF (1) ― IF = 10mA (Fig. 1)
Weight: 4.5 mg
Unit in mm
000707EAA2
