1SS402 ,Diode Silicon Epitaxial Schottoky Barrier Type High Speed Switching ApplicationsApplications Unit in mm Two independent diodes are mounted on four-pin ultra-small packages tha ..
1SS403 ,Diode Silicon Epitaxial Schottoky Barrier Type High Voltage Switching ApplicationsApplications Unit in mm Two-pin small packages are suitable for higher mounting densities. E ..
1SS404 ,SWITCHING DIODESApplications Unit: mm Tow-pin small packages are suitable for higher mounting densities Exc ..
1SS405 ,Small-signal Schottky barrier diodeElectrical Characteristics (Ta = 25°C) TestCharacteristic Symbol Test Condition Min Typ. Max UnitCi ..
1SS406 ,Small-signal Schottky barrier diodeElectrical Characteristics (Ta = 25°C) TestCharacteristic Symbol Test Condition Min Typ. Max UnitCi ..
1SS412 ,Switching diodeElectrical Characteristics (Ta = 25°C) TestCharacteristic Symbol Test Condition Min Typ. Max UnitCi ..
2560A , Pulse Dialer
2576 ,5-AmpAdjustableRegulatorsElectrical CharacteristicsSymbol Parameter Conditions LM338 UnitsMin Typ MaxV Reference Voltage 3V ..
25AA256I/SN , 256K SPI Bus Serial EEPROM
25AA256-I/SN , 256K SPI Bus Serial EEPROM
25AA256T-I/SN , 256K SPI Bus Serial EEPROM
25C02 , 1K/2K/4K/8K/16K SPI Serial CMOS E2PROM
1SS402
Diode Silicon Epitaxial Schottoky Barrier Type High Speed Switching Applications
1SS402
TOSHIBA Diode Silicon Epitaxial Schottoky Barrier Type
1SS402 High Speed Switching Applications Two independent diodes are mounted on four-pin ultra-small packages
that are suitable for higher mounting densities. Low forward voltage : VF (3) = 0.50V (typ.) Low reverse current : IR= 0.5µA (max) Small total capacitance : CT = 3.9pF (typ.)
Maximum Ratings (Ta = 25°C) (*) Unit rating. Total rating = Unit rating × 1.5
Electrical Characteristics (Ta = 25°C) VF (1) ― VR = 0, f = 1MHz ― 3.9
Pin Assignment (Top View) Marking Weight: 0.006 g
Unit in mm
000707EAA2
