1SS398 ,Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching ApplicationsApplications Unit: mm Low forward voltage : V = 1.0V (typ.) F High voltage : V = 400V (min) R ..
1SS398 ,Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications1SS398 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS398 High Voltage, High Speed Switching
1SS399 ,Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications1SS399 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS399 High Voltage, High Speed Switching
1SS399 ,Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching ApplicationsApplications Unit: mm Low forward voltage : V = 1.0V (typ.) F High voltage : V = 400V (min.) ..
1SS400CS , Switching diode
1SS400CST2RA , Switching Diode
2560A , Pulse Dialer
2576 ,5-AmpAdjustableRegulatorsElectrical CharacteristicsSymbol Parameter Conditions LM338 UnitsMin Typ MaxV Reference Voltage 3V ..
25AA256I/SN , 256K SPI Bus Serial EEPROM
25AA256-I/SN , 256K SPI Bus Serial EEPROM
25AA256T-I/SN , 256K SPI Bus Serial EEPROM
25C02 , 1K/2K/4K/8K/16K SPI Serial CMOS E2PROM
1SS398
Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications
1SS398 TOSHIBA Diode Silicon Epitaxial Planar Diode
1SS398 High Voltage, High Speed Switching Applications Low forward voltage : VF = 1.0V (typ.) High voltage : VR = 400V (min) Fast reverse recovery time : trr = 0.5µs (typ.) Small total capacitance : CT = 2.5pF (typ.) Small package : SC-59
Maximum Ratings (Ta = 25°C) : Unit rating. Total rating = unit rating × 0.7
Electrical Characteristics (Ta = 25°C) Weight: 0.012g
Unit: mm
