1SS396 ,Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching1SS396 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS396 Low Voltage High Speed Switc ..
1SS397 ,Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching ApplicationsApplications Unit: mm Low forward voltage : V = 1.0V (typ.) F High voltage : V = 400V (min.) ..
1SS398 ,Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching ApplicationsApplications Unit: mm Low forward voltage : V = 1.0V (typ.) F High voltage : V = 400V (min) R ..
1SS398 ,Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications1SS398 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS398 High Voltage, High Speed Switching
1SS399 ,Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications1SS399 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS399 High Voltage, High Speed Switching
1SS399 ,Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching ApplicationsApplications Unit: mm Low forward voltage : V = 1.0V (typ.) F High voltage : V = 400V (min.) ..
2560A , Pulse Dialer
2576 ,5-AmpAdjustableRegulatorsElectrical CharacteristicsSymbol Parameter Conditions LM338 UnitsMin Typ MaxV Reference Voltage 3V ..
25AA256I/SN , 256K SPI Bus Serial EEPROM
25AA256-I/SN , 256K SPI Bus Serial EEPROM
25AA256T-I/SN , 256K SPI Bus Serial EEPROM
25C02 , 1K/2K/4K/8K/16K SPI Serial CMOS E2PROM
1SS396
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching
1SS396 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS396 Low Voltage High Speed Switching Low forward voltage : VF (3) = 0.54V (typ.) Low reverse current : IR = 5µA (max.) Small package : SC-59
Maximum Ratings (Ta = 25°C) Unit rating. Total rating = unit rating × 0.7
Electrical Characteristics (Ta = 25°C)
Marking Weight: 0.012g
Unit: mm
