1SS392 ,Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application1SS392 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS392 High Speed Switching Applica ..
1SS393 ,Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application1SS393 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS393 High Speed Switching Applica ..
1SS394 ,Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application1SS394 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS394 High Speed Switching Applica ..
1SS395 ,Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application1SS395 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS395 High Speed Switching Applica ..
1SS396 ,Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching1SS396 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS396 Low Voltage High Speed Switc ..
1SS397 ,Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching ApplicationsApplications Unit: mm Low forward voltage : V = 1.0V (typ.) F High voltage : V = 400V (min.) ..
2560A , Pulse Dialer
2576 ,5-AmpAdjustableRegulatorsElectrical CharacteristicsSymbol Parameter Conditions LM338 UnitsMin Typ MaxV Reference Voltage 3V ..
25AA256I/SN , 256K SPI Bus Serial EEPROM
25AA256-I/SN , 256K SPI Bus Serial EEPROM
25AA256T-I/SN , 256K SPI Bus Serial EEPROM
25C02 , 1K/2K/4K/8K/16K SPI Serial CMOS E2PROM
1SS392
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application
1SS392 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS392 High Speed Switching Application Low forward voltage : VF (3) = 0.54V (typ.) Low reverse current : IR = 5µA (max) Small package : SC-59
Maximum Ratings (Ta = 25°C) : Unit rating. Total rating = unit rating × 1.5
Electrical Characteristics (Ta = 25°C) Weight: 0.012g
Unit: mm
