1SS388 ,SWITCHING DIODES1SS388 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS388 High Speed Switching Applica ..
1SS389 ,SWITCHING DIODES1SS389 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS389 High Speed Switching Applica ..
1SS390 TE61 , Band Switching Diode
1SS390TE61 , Band Switching Diode
1SS391 ,Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching1SS391 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS391 Low Voltage High Speed Switc ..
1SS392 ,Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application1SS392 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS392 High Speed Switching Applica ..
2560A , Pulse Dialer
2576 ,5-AmpAdjustableRegulatorsElectrical CharacteristicsSymbol Parameter Conditions LM338 UnitsMin Typ MaxV Reference Voltage 3V ..
25AA256I/SN , 256K SPI Bus Serial EEPROM
25AA256-I/SN , 256K SPI Bus Serial EEPROM
25AA256T-I/SN , 256K SPI Bus Serial EEPROM
25C02 , 1K/2K/4K/8K/16K SPI Serial CMOS E2PROM
1SS388
SWITCHING DIODES
1SS388 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS388 High Speed Switching Application Small package Low forward voltage: VF (3) = 0.54V (typ.) Low reverse current: IR = 5µA (typ.)
Maximum Ratings (Ta = 25°C) Mounted on a glass epoxy circuit board of 20 × 20 mm,
pad dimension of 4 × 4 mm.
Electrical Characteristics (Ta = 25°C)
Equivalent Circuit (Top View) Marking Weight: 1.4mg
Unit: mm
