1SS387CT ,Switching diodeAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 ) )a aa aCharacteristic ..
1SS388 ,SWITCHING DIODES1SS388 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS388 High Speed Switching Applica ..
1SS389 ,SWITCHING DIODES1SS389 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS389 High Speed Switching Applica ..
1SS390 TE61 , Band Switching Diode
1SS390TE61 , Band Switching Diode
1SS391 ,Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching1SS391 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS391 Low Voltage High Speed Switc ..
2560A , Pulse Dialer
2576 ,5-AmpAdjustableRegulatorsElectrical CharacteristicsSymbol Parameter Conditions LM338 UnitsMin Typ MaxV Reference Voltage 3V ..
25AA256I/SN , 256K SPI Bus Serial EEPROM
25AA256-I/SN , 256K SPI Bus Serial EEPROM
25AA256T-I/SN , 256K SPI Bus Serial EEPROM
25C02 , 1K/2K/4K/8K/16K SPI Serial CMOS E2PROM
1SS387CT
Switching diode
1SS387CT
Switching Diodes Silicon Epitaxial Planar
1SS387CT1SS387CT1SS387CT1SS387CT
1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Ultra-High-Speed Switching
2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures
(1) Small package
(2) Low forward voltage: VF(3) = 0.98 V (typ.)
(3) Fast reverse recovery time: trr = 1.6 ns (typ.)
(4) Small total capacitance: Ct = 0.5 pF (typ.)
3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit
