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1SS385FVTOSHIBAN/a281500avaiSmall-signal Schottky barrier diode


1SS385FV ,Small-signal Schottky barrier diodeElectrical Characteristics (Ta = 25°C) TestCharacteristic Symbol Test Condition Min Typ. Max UnitCi ..
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1SS385FV
Small-signal Schottky barrier diode
1SS385FV TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS385FV

High-Speed Switching Applications Low forward voltage: VF = 0.23 V (typ.) @IF = 5 mA
z Ultra-small package
Absolute Maximum Ratings (Ta = 25°C)

Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Unit rating. Total rating = unit rating × 1.5 ** : Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mmt)
Electrical Characteristics (Ta = 25°C)

Equivalent Circuit (Top View)
Marking

Unit: mm
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