1SS383 ,40V Dual Schottky Diode1SS383 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS383 Low Voltage High Speed Switc ..
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25AA256I/SN , 256K SPI Bus Serial EEPROM
25AA256-I/SN , 256K SPI Bus Serial EEPROM
25AA256T-I/SN , 256K SPI Bus Serial EEPROM
25C02 , 1K/2K/4K/8K/16K SPI Serial CMOS E2PROM
1SS383
40V Dual Schottky Diode
1SS383 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS383 Low Voltage High Speed Switching Small package Composed of 2 independent diodes. Low forward voltage: VF (3) = 0.54V (typ.) Low reverse current: IR = 5µA (max)
Maximum Ratings (Ta = 25°C) *: Unit rating. Total rating = unit rating × 1.5
Electrical Characteristics (Ta = 25°C)
Pin Assignment (Top View)
Marking Weight: 0.006g
Unit: mm