1SS374 ,Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application1SS374 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS374 High Speed Switching Applica ..
1SS376 , Switching diode
1SS377 ,Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching1SS377 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS377 High Speed Switching Unit in ..
1SS378 ,Diode Silicon Epitaxial Planar Schottky Barrier Type High Speed Switching1SS378 TOSHIBA Diode Silicon Epitaxial Planar Schottky Barrier Type 1SS378 High Speed Switching ..
1SS379 ,Diode Silicon Epitaxial Planar Type General Purpose Rectifier ApplicationsApplications Unit in mm Low forward voltage : V = 1.0V (typ.) F Low reverse current : I = 0.1 ..
1SS381 ,Diode Silicon Epitaxial Planar Type VHF Tuner Band Switch ApplicationsApplications Unit: mm Small package Small total capacitance: C = 1.2 pF (max) T Low serie ..
2560A , Pulse Dialer
2576 ,5-AmpAdjustableRegulatorsElectrical CharacteristicsSymbol Parameter Conditions LM338 UnitsMin Typ MaxV Reference Voltage 3V ..
25AA256I/SN , 256K SPI Bus Serial EEPROM
25AA256-I/SN , 256K SPI Bus Serial EEPROM
25AA256T-I/SN , 256K SPI Bus Serial EEPROM
25C02 , 1K/2K/4K/8K/16K SPI Serial CMOS E2PROM
1SS374
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application
1SS374 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS374 High Speed Switching Application Small package Low forward voltage: VF (2) = 0.23V (typ.) @IF = 5mA
Maximum Ratings (Ta = 25°C) Unit rating. Total rating = unit rating × 0.7
Electrical Characteristics (Ta = 25°C)
Marking Weight: 0.012g
Unit: mm
