1SS373 ,DIODE (HIGH SPEED SWITCHING APPLICATION)1SS373HIGH SPEED SWITCHING APPLICATION Unit in mmSmall Package~---“-- - “v--“b v
0.8-lc0.1
T - ..
1SS373 ,DIODE (HIGH SPEED SWITCHING APPLICATION)1SS373HIGH SPEED SWITCHING APPLICATION Unit in mmSmall Package~---“-- - “v--“b v
0.8-lc0.1
T - ..
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1SS373
DIODE (HIGH SPEED SWITCHING APPLICATION)
TOSHIBA ISS373
TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE
HIGH SPEED SWITCHING APPLICATION Unit in mm
. Small Package
q Low Forward Voltage : VF=0.23V (TYP.) @IF=5mA ii'
MAXIMUM RATINGS (Ta =25°C) 52>
CHARACTERISTIC SYMBOL RATING UNIT g mos
Maximum (Peak) Reverse VRM 1 5 V
Voltage 0,3i0.05 013:8;55
Reverse Voltage VR 10 V
Maximum (Peak) Forward _
mA 5 ,
Current IFM 200 m o' 2 -
Average Forward Current 10 100 mA
Surge Current (10ms) IFSM 1 A
Power Dissipation PX 150 mW SSC
J unction Temperature Tj 1 25 °C J E DEC -
Storage Temperature Range Tstg - 55~ 125 'C EIAJ -
Operating Temperature T 40-- 100 o C TOSHIBA 1-1FIA
Range Opr - Weight : 1.9mg
.)..4 Mounted on a glass epoxy circuit board of 20X20mm Pad dimension of 4X4mm.
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
VF(1) IF=1mA - 0.18 -
Forward Voltage VF(2) IF = 5mA - 0.23 0.30 V
VF(3) IF = 100mA - 0.35 0.50
Reverse Current IR VR = 10V - - 2O luA
Total Capacitance CT VR = 0, f = lMHz - 20 40 pF
EQUIVALENT CIRCUIT(TOP VIEW) MARKING
[I-M-T] II S 4 II
961001 EAA2
O TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can
malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing
TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss
of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the
TOSHIBA Semiconductor Reliability Handbook.
0 The information contained herein is presented only as a guide for the ap lications of our products. No responsibility is assumed by TOSHIBA
CORPORATION for any infringements of intellectual property or other rights 0 the third parties which may result from its use. No license is granted
l implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
0 T e information contained herein is subject to change without notice.
1997-05-07 1/2
TOSHIBA
1SS373
FORWARD CURRENT IF (A)
CAPACITANCE CT
0 0.1 0.2 0.3 0.4 0.5
FORWARD VOLTAGE " (V)
CT - VR
f = IMHz
Ta = 25''C
10m 30m 0.1 0.3 1 3 10
REVERSE VOLTAGE VR (V)
REVERSE CURRENT IR (A)
POWER DISSIPATION P (mW)
0 2 4 6 8 10 12 14
REVERSE VOLTAGE VR (V)
P - Ta
Mounted on a glass
epoxy circuit board of
160 20 X20mm, pad
dimension 4X4mm.
O 25 50 75 100 125 150
AMBIENT TEMPERATURE Ta (°C)
1997-05-07 2/2
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