1SS369 ,DIODE (LOW VOLTAGE HIGH SPEED SWITCHING)ISS369LOW VOLTAGE HIGH SPEED SWITCHING Unit in mm0 Small Package0 Low Forward Voltage : VTpfay--0.5 ..
1SS370 ,Diode Silicon Epitaxial Planar Type High Voltage, High Speed Switching ApplicationsApplications Unit: mm Low forward voltage : V = 0.9V (typ.) F (2) Fast reverse recovery time ..
1SS372 ,SCHOTTKY BARRIER RECTIFIERS1SS372 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS372 High Speed Switching Applica ..
1SS372 ,SCHOTTKY BARRIER RECTIFIERS1SS372 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS372 High Speed Switching Applica ..
1SS373 ,DIODE (HIGH SPEED SWITCHING APPLICATION)1SS373HIGH SPEED SWITCHING APPLICATION Unit in mmSmall Package~---“-- - “v--“b v
0.8-lc0.1
T - ..
1SS373 ,DIODE (HIGH SPEED SWITCHING APPLICATION)1SS373HIGH SPEED SWITCHING APPLICATION Unit in mmSmall Package~---“-- - “v--“b v
0.8-lc0.1
T - ..
2560A , Pulse Dialer
2576 ,5-AmpAdjustableRegulatorsElectrical CharacteristicsSymbol Parameter Conditions LM338 UnitsMin Typ MaxV Reference Voltage 3V ..
25AA256I/SN , 256K SPI Bus Serial EEPROM
25AA256-I/SN , 256K SPI Bus Serial EEPROM
25AA256T-I/SN , 256K SPI Bus Serial EEPROM
25C02 , 1K/2K/4K/8K/16K SPI Serial CMOS E2PROM
1SS369
DIODE (LOW VOLTAGE HIGH SPEED SWITCHING)
TOSHIBA
ISS369
TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE
LOW VOLTAGE HIGH SPEED SWITCHING
Unit in mm
CATHODE MARK
J EDEC -
EIAJ -
TOSHIBA 1-1F1A
0 Small Package
0 Low Forward Voltage : VF(3)=0.54V(TYP.)
0 Low Reverse Current : IR=5pA(MAX.)
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Maximum (Peak) Reverse
Voltage VRM 45 V
Reverse Voltage VR 40 V
Maximum (Peak) Forward
Current IFM 300 mA
Average Forward Current IO 100 mA
Surge Current(10ms) IFSM 1 A
Power Dissipation PX 150 mW
J unction Temperature Tj 125 T
Storage Temperature Range Tstg -55--125 "C
Operating Temperature o
Range Topr - 40 100 C
.y.f Mounted on a glass epoxy circuit board
ELECTRICAL CHARACTERISTICS (Ta = 25''C)
of 20X20mm, pad dimension
Weight : 1.9mg
of 4X4mm.
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
VF (1) IF=1mA - 0.28 -
Forward Voltage VF (2) IF = 10mA - 0.36 - V
VF (3) IF = 100mA - 0.54 0.60
Reverse Current IR VR = 40V - - 5 ,aA
Total Capacitance CT VR = O, f = 1MHz - 18 25 pF
PIN ASSIGNMENT (TOP VIEW) MARKING
CC-yt-ECI " I S 3 3]
961001 EAA2
TOSHIBA Semiconductor Reliability Handbook.
O TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can
malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibilit
TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TO HIBA product could cause loss
of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the
of the buyer, when utilizing
1997-05-07 1/2
TOSHIBA ISS369
FORWARD CURRENT IF (mA)
TOTAL CAPACITANCE CT (pF)
IF - VF IR - VR
300 100p
Ta=100°C
Ta=100°C
E 300n
i? 100n
3 y 30n
0,1 O,1a
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 10 20 30 40 50
FOWARD VOLTAGE " (V) REVERSE VOLTAGE VR (V)
CT - VR
0 4 8 12 16 20 24 28 32 36
REVERSE VOLTAGE VR (V)
961001EAA2'
O The information contained herein is presented only as a guide for the ap lications of our products. No responsibility is assumed by TOSHIBA
CORPORATION for any infringements of intellectual property or other rights o the third games which may result from its use. No license is granted
by implication or otherwise under any intellectual property or other rights of TOSHIBA C
O The information contained herein is subject to change without notice.
RPORATION or others.
1997-05-07 2/2
www.ic-phoenix.com
.
