1SS368 ,DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)ISS368ULTRA HIGH SPEED SWITCHING APPLICATION Unit in mm0 Small Package0 Low Forward Voltage : VF(3) ..
1SS369 ,DIODE (LOW VOLTAGE HIGH SPEED SWITCHING)ISS369LOW VOLTAGE HIGH SPEED SWITCHING Unit in mm0 Small Package0 Low Forward Voltage : VTpfay--0.5 ..
1SS370 ,Diode Silicon Epitaxial Planar Type High Voltage, High Speed Switching ApplicationsApplications Unit: mm Low forward voltage : V = 0.9V (typ.) F (2) Fast reverse recovery time ..
1SS372 ,SCHOTTKY BARRIER RECTIFIERS1SS372 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS372 High Speed Switching Applica ..
1SS372 ,SCHOTTKY BARRIER RECTIFIERS1SS372 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS372 High Speed Switching Applica ..
1SS373 ,DIODE (HIGH SPEED SWITCHING APPLICATION)1SS373HIGH SPEED SWITCHING APPLICATION Unit in mmSmall Package~---“-- - “v--“b v
0.8-lc0.1
T - ..
2560A , Pulse Dialer
2576 ,5-AmpAdjustableRegulatorsElectrical CharacteristicsSymbol Parameter Conditions LM338 UnitsMin Typ MaxV Reference Voltage 3V ..
25AA256I/SN , 256K SPI Bus Serial EEPROM
25AA256-I/SN , 256K SPI Bus Serial EEPROM
25AA256T-I/SN , 256K SPI Bus Serial EEPROM
25C02 , 1K/2K/4K/8K/16K SPI Serial CMOS E2PROM
1SS368
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)
TOSHIBA 1SS368
TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE
ULTRA HIGH SPEED SWITCHING APPLICATION Unit in mm
0 Small Package
0 Low Forward Voltage : VF(3)=0.98V(TYP.)
0 Fast Reverse Recovery Time : trr=1.6ns(TYP.) g
0 Small Total Capacitance .' CT=0.5pF(TYP.) g
MAXIMUM RATING (Ta =25°C) ii-,':
CHARACTERISTIC SYMBOL RATING UNIT "thos
Maximum (Peak) Reverse Voltage VRM 85 V
Reverse Voltage VR 80 V jLon3'-ikls
Maximum (Peak) Forward Current IFM 200 mA
Average Forward Current 10 100 mA 1 I l 53 3?
Surge Current (10ms) IFSM 1 A 0 c',
Power Dissipation P 150 yd. mW
J unction Temperature Tj 125 "C ssc
Storage Temperature Range Tstg -55--125 "C JEDEC -
yt. : Mounted on a glass epoxy circuit board of 20X20mm, J
pad dimension of 4X4mm. TOSHIBA 1-1F1A
ELECTRICAL CHARACTERISTICS (Ta =25°C) Weight : L9mg
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
VF (1) IF = 1mA - 0.62 -
Forward Voltage VF (2) IF-- 10mA - 0.75 - V
VF (3) IF = 100mA - 0.98 1.20
I V =30V - - 0.1
Reverse Current R(l) R pA
IR (2) VR = 80V - - 0.5
Total Capacitance CT VR=0, f = 1MHz - 0.5 3.0 pF
Reverse Recovery Time trr IF=10mA, Fig.1 - 1.6 4.0 ns
Fig.1 : REVERSE RECOVERY TIME (trr)TEST CIRCUIT PTIN PAaféwMENT
INPUT WAVEFORM OUTPUT_WAVEFORM ( O )
INPUT 0.01/1F DUT OUTPUT IF=10mA J I]: M E
, g N g IR 0.1 IR MARKING
-6V Lo MO
50ns tra. D: I C 1 cr]
961001EAA2
O TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can
malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibilit of the buyer, when utilizing
TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TO HIBA product could cause loss
of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the
TOSHIBA Semiconductor Reliability Handbook.
1997-05-07 1/2
TOSHIBA ISS368
IF - VF IR - VR
100m 3p
s 30m tl Ip Ta=100°C
"" 10m "‘ 300n
E a 75
Z 2; 100n
: 3m 32
D 1m D 30n
ii 300 M 10n
J /r g 3n
pe 100 >
a ,u g In
30y 300p
10y 100p
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 10 20 30 40 50 60 70 80 90
FORWARD VOLTAGE VF (V) REVERSE VOLTAGE VR (V)
CT - VR
f=1MHz
Ta=25°C
TOTAL CAPACITANCE CT (pF)
0.1 0.3 1 3 10 30 100
REVERSE VOLTAGE VR (V)
961001EAA2'
O The information contained herein is presented only as a guide for the ap lications of our products. No responsibility is assumed by TOSHIBA
CORPORATION for any infringements of intellectual property or other rights o the third games which may result from its use. No license is granted
by implication or otherwise under any intellectual property or other rights of TOSHIBA C RPORATION or others.
0 The information contained herein is subject to change without notice.
1997-05-07 2/2
www.ic-phoenix.com
.
