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1SS362FVTOSHIBAN/a72000avaiSwitching diode


1SS362FV ,Switching diodeElectrical Characteristics (Ta = 25°C) TestCharacteristic Symbol Test Condition Min Typ. Max UnitCi ..
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1SS362FV
Switching diode
1SS362FV TOSHIBA Diode Silicon Epitaxial Planar Type
1SS362FV

Ultra-High-Speed Switching Applications
z Small package Excellent in forward current and forward voltage
characteristics: VF (3) = 0.97 V (typ.) Fast reverse recovery time: trr = 1.6 ns (typ.) Small total capacitance: CT = 0.9 pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)

Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Unit rating. Total rating = unit rating × 0.7
**: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mm (t))
Electrical Characteristics (Ta = 25°C)

Weight: 1.5 mg (typ.)
Unit: mm
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