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1SS361F
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Applications
1SS361F TOSHIBA Diode Silicon Epitaxial Planar Type
1SS361F Ultra High Speed Switching Applications Small package : 1608 Flat lead Excellent in forward current and forward voltage
characteristics : VF (3) = 0.9V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.9pF (typ.)
Maximum Ratings (Ta = 25°C) (*) Unit rating. Total rating = unit rating × 1.5
Electrical Characteristics (Ta = 25°C) Weight: 2.3 mg
Unit in mm
000707EAA1
