1SS344 ,Diode Silicon Epitaxial Schottky Planar Type Ultra High Speed Switching Application1SS344 TOSHIBA Diode Silicon Epitaxial Schottky Planar Type 1SS344 Ultra High Speed Switching Ap ..
1SS345 ,UHF Detector, Mixer Applications Silicon Epitaxial Schottky Barrier DiodeFeatures Package Dimensions · Small interterminal capacitance (C=0.45pF typ).unit:mm · Low forward ..
1SS348 ,Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching1SS348 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS348 Low Voltage High Speed Switc ..
1SS349 ,Diode Silicon Epitaxial Schottky Planar Type Ultra High Speed Switching Application1SS349 TOSHIBA Diode Silicon Epitaxial Schottky Planar Type 1SS349 Ultra High Speed Switching Ap ..
1SS350 ,UHF Detector, Mixer Applications Silicon Epitaxial Schottky Barrier DiodeAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniPV eak Reverse Vol ..
1SS350 ,UHF Detector, Mixer Applications Silicon Epitaxial Schottky Barrier DiodeFeatures Package Dimensions · Small interterminal capacitance (C=0.69pF typ).unit:mm · Low forward ..
250R05L3R3CV4T , MULTI-LAYER HIGH-Q CAPACITORS
2560A , Pulse Dialer
2576 ,5-AmpAdjustableRegulatorsElectrical CharacteristicsSymbol Parameter Conditions LM338 UnitsMin Typ MaxV Reference Voltage 3V ..
1SS344
Diode Silicon Epitaxial Schottky Planar Type Ultra High Speed Switching Application
1SS344 TOSHIBA Diode Silicon Epitaxial Schottky Planar Type
1SS344 Ultra High Speed Switching Application Low forward voltage : VF (3) = 0.50V (typ.) Fast reverse recovery time : trr = 20ns (typ.) High average forward current : IO = 0.5A (max)
Maximum Ratings (Ta = 25°C)
Electrical Characteristics (Ta = 25°C) Weight: 0.012g
Unit: mm
