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1SS337
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application
1SS337 TOSHIBA Diode Silicon Epitaxial Planar Type
1SS337 Ultra High Speed Switching Application Small package : SC-59 Low forward voltage : VF (3) = 0.88V (typ.) Fast reverse recovery time : trr = 6ns (typ.) Small total capacitance : CT = 1.6pF (typ.)
Maximum Ratings (Ta = 25°C) *: Unit rating. Total rating = unit rating × 1.5
Electrical Characteristics (Ta = 25°C) Weight: 0.012g
Unit: mm
