1SS321 ,Diode Silicon Epitaxial Planar Type Low Voltage High Speed Switching1SS321 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS321 Unit: mm Low Voltage High Speed Switch ..
1SS321 ,Diode Silicon Epitaxial Planar Type Low Voltage High Speed Switching1SS321 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS321 Unit: mm Low Voltage High Speed Switch ..
1SS322 ,Diode Silicon Epitaxial Planar Type Low Voltage High Speed Switching1SS322 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS322 Unit: mm Low Voltage High Speed Switch ..
1SS336 ,Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application1SS336 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS336 Ultra High Speed Switching Application ..
1SS337 ,Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application1SS337 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS337 Ultra High Speed Switching Application ..
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250R05L3R3CV4T , MULTI-LAYER HIGH-Q CAPACITORS
2560A , Pulse Dialer
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1SS321
Diode Silicon Epitaxial Planar Type Low Voltage High Speed Switching
1SS321 TOSHIBA Diode Silicon Epitaxial Planar Type
1SS321 Low Voltage High Speed Switching Low forward voltage : VF = 0.42V (typ.) Low reverse current : IR = 500nA (max) Small package : SC-59 (SOT-23MOD)
Maximum Ratings (Ta = 25°C) (*) Unit rating. Total rating = unit rating × 1.5.
Electrical Characteristics (Ta = 25°C)
Marking Unit: mm
Weight: 0.012g
