1SS319 ,Diode Silicon Epitaxial Planar Type Low Voltage High Speed Switching1SS319 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS319 Low Voltage High Speed Switching Unit: ..
1SS321 ,Diode Silicon Epitaxial Planar Type Low Voltage High Speed Switching1SS321 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS321 Unit: mm Low Voltage High Speed Switch ..
1SS321 ,Diode Silicon Epitaxial Planar Type Low Voltage High Speed Switching1SS321 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS321 Unit: mm Low Voltage High Speed Switch ..
1SS322 ,Diode Silicon Epitaxial Planar Type Low Voltage High Speed Switching1SS322 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS322 Unit: mm Low Voltage High Speed Switch ..
1SS336 ,Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application1SS336 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS336 Ultra High Speed Switching Application ..
1SS337 ,Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application1SS337 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS337 Ultra High Speed Switching Application ..
250R05L3R3CV4T , MULTI-LAYER HIGH-Q CAPACITORS
2560A , Pulse Dialer
2576 ,5-AmpAdjustableRegulatorsElectrical CharacteristicsSymbol Parameter Conditions LM338 UnitsMin Typ MaxV Reference Voltage 3V ..
1SS319
Diode Silicon Epitaxial Planar Type Low Voltage High Speed Switching
1SS319 TOSHIBA Diode Silicon Epitaxial Planar Type
1SS319 Low Voltage High Speed Switching Low forward voltage : VF (3) = 0.54V (typ.) Low reverse current : IR = 5µA (max) Small package : SC-61
Maximum Ratings (Ta = 25°C) (*) Unit rating. Total rating = unit rating � 1.5.
Electrical Characteristics (Ta = 25°C)
Marking Weight: 0.013g
Unit: mm
