1SS315 ,Diode Silicon Epitaxial Schottky Barrier Type UHF Band Mixer ApplicationsApplications Unit: mm Maximum Ratings (Ta 25°C)Characteristics Symbol Rating Unit Maximum ..
1SS319 ,Diode Silicon Epitaxial Planar Type Low Voltage High Speed Switching1SS319 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS319 Low Voltage High Speed Switching Unit: ..
1SS321 ,Diode Silicon Epitaxial Planar Type Low Voltage High Speed Switching1SS321 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS321 Unit: mm Low Voltage High Speed Switch ..
1SS321 ,Diode Silicon Epitaxial Planar Type Low Voltage High Speed Switching1SS321 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS321 Unit: mm Low Voltage High Speed Switch ..
1SS322 ,Diode Silicon Epitaxial Planar Type Low Voltage High Speed Switching1SS322 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS322 Unit: mm Low Voltage High Speed Switch ..
1SS336 ,Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application1SS336 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS336 Ultra High Speed Switching Application ..
250R05L3R3CV4T , MULTI-LAYER HIGH-Q CAPACITORS
2560A , Pulse Dialer
2576 ,5-AmpAdjustableRegulatorsElectrical CharacteristicsSymbol Parameter Conditions LM338 UnitsMin Typ MaxV Reference Voltage 3V ..
1SS315
Diode Silicon Epitaxial Schottky Barrier Type UHF Band Mixer Applications
1SS315 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS315 UHF Band Mixer Applications
Maximum Ratings (Ta ��� � 25°C)
Electrical Characteristics (Ta ��� � 25°C) CT VR � 0.2 V, f � 1 MHz
Marking Unit: mm
Weight: 0.004 g (typ.)
