1SS307 ,Diode Silicon Epitaxial Planar Type General Puropose Rectifier ApplicationsApplications Unit: mm Low forward voltage : V = 1.0V (typ.) F Low reverse current : I = 0.1nA ..
1SS308 ,Diode Silicon Epitaxial Planar Type Ultra High Speed Switching ApplicationsApplications Unit: mm Small package : SC-74A Low forward voltage : V = 0.92V (typ.) F (3)Fa ..
1SS309 ,Diode Silicon Epitaxial Planar Type Ultra High Speed Switching ApplicationsApplications Unit: mm Small package : SC-74A Low forward voltage : V = 0.90V (typ.) F (3)Fa ..
1SS311 ,Diode Silicon Epitaxial Planar Type High Voltage,High Speed Switching Applications1SS311 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS311 High Voltage,High Speed Switching
1SS311 ,Diode Silicon Epitaxial Planar Type High Voltage,High Speed Switching ApplicationsApplications Unit: mm Low forward voltage : V = 0.94V (typ.) FHigh voltage : V = 400V (min) R ..
1SS312 ,DIODE VHF TUNER BAND SWITCH APPLICATIONSELECTRICAL CHARACTERISTICS (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNIT
Forwardvo1tagelv ..
250R05L3R3CV4T , MULTI-LAYER HIGH-Q CAPACITORS
2560A , Pulse Dialer
2576 ,5-AmpAdjustableRegulatorsElectrical CharacteristicsSymbol Parameter Conditions LM338 UnitsMin Typ MaxV Reference Voltage 3V ..
1SS307
Diode Silicon Epitaxial Planar Type General Puropose Rectifier Applications
1SS307 TOSHIBA Diode Silicon Epitaxial Planar Type
1SS307 General Puropose Rectifier Applications Low forward voltage : VF = 1.0V (typ.) Low reverse current : IR = 0.1nA (typ.) Small total capacitance : CT = 3.0pF (typ.) Small package : SC−59
Maximum Ratings (Ta = 25°C)
Electrical Characteristics (Ta = 25°C)
Marking Weight: 0.012g
Unit: mm
