1SS306 ,Diode Silicon Epitaxial Planar Type High Voltage,High Speed Switching ApplicationsApplications Unit: mm Low forward voltage : V = 0.90V (typ.) F (2)Fast reverse recovery time ..
1SS307 ,Diode Silicon Epitaxial Planar Type General Puropose Rectifier ApplicationsApplications Unit: mm Low forward voltage : V = 1.0V (typ.) F Low reverse current : I = 0.1nA ..
1SS308 ,Diode Silicon Epitaxial Planar Type Ultra High Speed Switching ApplicationsApplications Unit: mm Small package : SC-74A Low forward voltage : V = 0.92V (typ.) F (3)Fa ..
1SS309 ,Diode Silicon Epitaxial Planar Type Ultra High Speed Switching ApplicationsApplications Unit: mm Small package : SC-74A Low forward voltage : V = 0.90V (typ.) F (3)Fa ..
1SS311 ,Diode Silicon Epitaxial Planar Type High Voltage,High Speed Switching Applications1SS311 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS311 High Voltage,High Speed Switching
1SS311 ,Diode Silicon Epitaxial Planar Type High Voltage,High Speed Switching ApplicationsApplications Unit: mm Low forward voltage : V = 0.94V (typ.) FHigh voltage : V = 400V (min) R ..
250R05L3R3CV4T , MULTI-LAYER HIGH-Q CAPACITORS
2560A , Pulse Dialer
2576 ,5-AmpAdjustableRegulatorsElectrical CharacteristicsSymbol Parameter Conditions LM338 UnitsMin Typ MaxV Reference Voltage 3V ..
1SS306
Diode Silicon Epitaxial Planar Type High Voltage,High Speed Switching Applications
1SS306 TOSHIBA Diode Silicon Epitaxial Planar Type
1SS306 High Voltage,High Speed Switching Applications Low forward voltage : VF (2) = 0.90V (typ.) Fast reverse recovery time : trr = 30ns (max) Small total capacitance : CT = 1.5pF (typ.) Small package : SC-61
Maximum Ratings (Ta = 25°C) *: Unit rating. Total rating = unit rating × 1.5
Electrical Characteristics (Ta = 25°C) Weight: 0.013g
Unit: mm
