1SS305 ,Silicon switching diodeFEATURESPACKAGE DIMENSIONS (Unit: mm)• Low capacitance: Ct = 4.0 pF MAX.• High speed switching: trr ..
1SS305-T1 ,Silicon switching diodeDATA SHEETSILICON SWITCHING DIODE1SS305HIGH SPEED SWITCHINGSILICON EPITAXIAL DIODE
1SS305-T1 ,Silicon switching diodeELECTRICAL CHARACTERISTICS (TA = 25°C)CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITFor ..
1SS305-T2 ,Silicon switching diodeapplications including switching, limitter, clipper.1.25±0.1ABSOLUTE MAXIMUM RATINGSMaximum Voltage ..
1SS306 ,Diode Silicon Epitaxial Planar Type High Voltage,High Speed Switching ApplicationsApplications Unit: mm Low forward voltage : V = 0.90V (typ.) F (2)Fast reverse recovery time ..
1SS307 ,Diode Silicon Epitaxial Planar Type General Puropose Rectifier ApplicationsApplications Unit: mm Low forward voltage : V = 1.0V (typ.) F Low reverse current : I = 0.1nA ..
250R05L3R3CV4T , MULTI-LAYER HIGH-Q CAPACITORS
2560A , Pulse Dialer
2576 ,5-AmpAdjustableRegulatorsElectrical CharacteristicsSymbol Parameter Conditions LM338 UnitsMin Typ MaxV Reference Voltage 3V ..
1SS305-1SS305-T1-1SS305-T2
