1SS301 ,Diode Silicon Epitaxial Planar Type Ultra High Speed Switching ApplicationsApplications Unit: mm Small package : SC-70 Low forward voltage : V = 0.92 V (typ.) F (3)Fa ..
1SS302 ,Diode Silicon Epitaxial Planar Type Ultra High Speed Switching ApplicationsApplications Unit: mm Small package : SC-70 Low forward voltage : V = 0.90V (typ.) F (3)Fas ..
1SS302TE85L , TOSHIBA Diode Silicon Epitaxial Planar Type
1SS303 ,Switching diodeFEATURESPACKAGE DIMENSIONS (Unit: mm)• Low capacitance: Ct = 2.5 pF TYP.• High speed switching: trr ..
1SS303-T1 ,Switching diodeapplications including switching, limitter, clipper.1.25±0.1• Double diode configuration assures ec ..
1SS303-T2 ,Switching diodeDATA SHEETSILICON SWITCHING DIODE1SS303HIGH SPEED SWITCHINGSILICON EPITAXIAL DOUBLE DIODE : COMMON ..
250R05L3R3CV4T , MULTI-LAYER HIGH-Q CAPACITORS
2560A , Pulse Dialer
2576 ,5-AmpAdjustableRegulatorsElectrical CharacteristicsSymbol Parameter Conditions LM338 UnitsMin Typ MaxV Reference Voltage 3V ..
1SS301
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Applications
1SS301 TOSHIBA Diode Silicon Epitaxial Planar Type
1SS301 Ultra High Speed Switching Applications Small package : SC-70 Low forward voltage : VF (3) = 0.92 V (typ.) Fast reverse recovery time : trr = 1.6 ns (typ.) Small total capacitance : CT = 0.9 pF (typ.)
Maximum Ratings (Ta = 25°C) *: Unit rating. Total rating = unit rating × 1.5
Electrical Characteristics (Ta = 25°C) ―
Unit: mm
Weight: 0.006 g (typ.)
